In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

The method for fabricating a device includes the following successive steps: providing a first substrate made from silicon of (100), (110) or (111) orientation, from a material of III-IV type or from a material of II-VI type, provided with at least one salient metal pad, and providing a second substrate; fixing the first substrate with the second substrate, the at least one metal pad forming a blocking means preventing movement beyond a threshold position; and performing an anneal of the metal pad so as to melt the metal pad and eliminate the blocking means.

A semiconductor component is provided. The semiconductor component includes a substrate and a pad. The pad has an upper surface and a slot, wherein the slot is recessed with respect to the upper surface.

In some examples, a package comprises a semiconductor die and a bond pad formed upon the semiconductor die. The bond pad has a protrusion on a top surface of the bond pad. The package also comprises a metal contact and a bond wire coupled to the protrusion and to the metal contact.

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the enclosed interface region. The degradation prevention structure is vertically located between a portion of the bond structure and a portion of the electrically conductive contact pad structure.

A method for inserting a wire into a longitudinal groove of a semiconductor chip for the assembly thereof, the groove containing a pad made of a bonding material having a set melting point, the method comprises: in a positioning step, placing a longitudinal section of the wire along the groove, in forced abutment against the pad; and, in an insertion step, exposing a zone containing at least one portion of the pad to a processing temperature higher than the melting point of the bonding material and for a sufficient time to make the pad at least partially melt, and causing the wire to be inserted into the groove. The present disclosure also relates to a piece of equipment allowing the insertion method to be implemented.

A fabrication method of the device includes provision of a first stack including: a first substrate including at least one main surface provided with at least a first electric contact area, a second substrate provided with a salient spacer. The first substrate is assembled with the second substrate so as to define at least a first lateral groove including the first electric contact area, the first lateral groove being bounded by the first substrate, the second substrate and the spacer includes at least a first protuberance arranged to form a stop and to limit movement of the spacer relatively to the first substrate in at least a first direction passing via the first lateral groove and the spacer and a second direction parallel the longitudinal axis of the first groove and perpendicular to the first direction.

The present invention relates to an electronic circuit arrangement (10) comprising: a substrate (12) having a first surface (12a) and a second surface (12b), an electronic circuit, an electrical connection part (16) for providing an electrical connection to the electronic circuit and being arranged on the first surface (12a), and at least one electrical wire (18). The electrical wire (18) comprises at least one conductive core (20) and an isolation (22) surrounding the conductive core (20). An end portion (18a) of the electrical wire (18) is an isolation-free portion for allowing access to the conductive core (20), wherein the end portion (18a) of the electrical wire (18) is connected to the electrical connection part (16). At least one through-hole (24) extending from the first surface (12a) to the second surface (12b) is provided in the substrate (12), wherein the electrical wire (18) is arranged through the through-hole (24).

A method of forming a wire interconnect structure includes the steps of: (a) forming a wire bond at a bonding location on a substrate using a wire bonding tool; (b) extending a length of wire, continuous with the wire bond, to another location; (c) pressing a portion of the length of wire against the other location using the wire bonding tool; (d) moving the wire bonding tool, and the pressed portion of the length of wire, to a position above the wire bond; and (e) separating the length of wire from a wire supply at the pressed portion, thereby providing a wire interconnect structure bonded to the bonding location.