A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A method and a device for establishing a wire connection between a first contact surface and at least one further contact surface. A contact end of a wire is positioned in a contact position relative to the first contact surface with a wire guiding tool. Subsequently, a mechanical, electrically conductive connection is established between the first contact surface and the contact end with a first solder material connection, and subsequently the wire guiding tool is moved to the further contact surface thus forming a wire section and establishing a further mechanical, electrically conductive connection between the wire section end and the further contact surface with a further solder material connection.

One aspect relates to a method of manufacture of an electronic assembly comprising at least these steps: providing a substrate having at least a first contact area; positioning a spot of a UV curable substance on the substrate; positioning an electrically conductive item on the substrate wherein the electrically conductive item is superimposed on the first contact area and on the spot of curable substance; exposing the UV curable substance to UV irradiation, wherein a mechanical connection between the electrically conductive item and substrate is formed; and optionally connecting the first contact area with the electrically conductive item. One aspect relates to an electronic assembly comprising a substrate with a contact area, a spot of a cured substance on the substrate and an electrically conductive item that is in electrically conductive connection with the first contact area and mechanically connected through the spot of cured substance to the substrate.

A method of forming a semiconductor device includes providing a carrier comprising a die attach pad, providing a semiconductor die that includes a bond pad disposed on a main surface of the semiconductor die, and providing a metal interconnect element, arranging the semiconductor die on the die attach pad such that the bond pad faces away from the die attach pad, and welding the metal interconnect element to the bond pad, wherein the bond pad comprises first and second metal layers, wherein the second metal layer is disposed between the first metal layer and a semiconductor body of the semiconductor die, wherein a thickness of the first metal layer is greater than a thickness of the second metal layer, and wherein the first metal layer has a different metal composition as the second metal layer.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A package includes an integrated circuit that includes at least one active area and at least one secondary device area, a support configured to support the integrated circuit, and a die attach material. The integrated circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A microelectronic package may include a substrate having first and second surfaces each extending in first and second directions, a NAND wafer having a memory storage array, a bitline driver chiplet configured to function as a bitline driver, and a wordline driver chiplet configured to function as a wordline driver. The NAND wafer may be coupled to the first surface of the substrate, and the bitline and wordline driver chiplets may each be mounted to a front surface of the NAND wafer. The NAND wafer may have element contacts electrically connected with conductive structure of the substrate. The bitline and wordline driver chiplets may be elongated along the first and second directions, respectively. Front surfaces of the bitline driver chiplet and the wordline driver chiplet may be arranged in a single common plane and may be entirely contained within an outer periphery of the front surface of the NAND wafer.

The present disclosure discloses a trench Insulated Gate Bipolar Transistor (IGBT) packaging structure and a method for manufacturing the trench Insulated Gate Bipolar Transistor packaging structure. The trench IGBT packaging structure includes: a trench IGBT, which includes an emitting electrode metal layer, and a trench gate electrode; a lead frame, which includes a chip placement area and an emitting electrode lead-out end; a first bonding wire connecting the emitting electrode metal layer and an emitting electrode pin. One end of the first bonding wire is connected to a surface, away from the trench gate electrode, of the emitting electrode metal layer to form a strip-shaped first solder joint, the other end is connected to the emitting electrode lead-out end to form a second solder joint, and an extension direction of the first solder joint is perpendicular to an extension direction of the trench of the trench gate electrode.

An exemplary semiconductor device can comprise a die, a redistribution structure (RDS), an interconnect, a conductive strap, an encapsulant, and an EMI shield. The redistribution structure can comprise an RDS top surface coupled to the die bottom side. The interconnect can be coupled to the RDS bottom surface. The conductive strap can be coupled to the RDS, and can comprise a strap inner end coupled to the RDS bottom surface, and a strap outer end located lower than the RDS bottom surface. The encapsulant can encapsulate the conductive strap and the RDS bottom surface. The EMI shield can cover and contact the encapsulant sidewall and the strap outer end. Other examples and related methods are also disclosed herein.