Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include a substrate, a plurality of electronic components in a stacked relationship, and an encapsulant material encapsulating the electronic components. Each of the electronic components can be electrically coupled to the substrate via a wire bond connection and spaced apart from an adjacent electronic component to provide clearance for the wire bond connection. The encapsulant can be disposed between center portions of adjacent electronic components. Associated systems and methods are also disclosed.

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

A semiconductor package includes a package substrate having a first side portion adjacent to a first edge, and a second side portion adjacent to a second edge opposite the first edge; a plurality of first substrate pads on the package substrate at the first side portion of the package substrate; a first chip on the package substrate; a second chip stacked on the first chip in a step-wise manner to result in a first exposure region exposing a portion of a surface of the first chip with respect to the second chip due to the step-wise stacking, the first exposure region being adjacent to a first edge of the first chip; a plurality of first bonding pads on a first portion of the first exposure region, the first portion of the first exposure region being adjacent to the first edge of the first chip; a plurality of second bonding pads on a second portion of the first exposure region, the second portion of the first exposure region further from the first edge of the first chip than the first portion of the first exposure region is to the first edge of the first chip, the plurality of second bonding pads being electrically insulated from any circuit components in the first chip; a plurality of third bonding pads on a surface of the second chip; and a plurality of bonding wires electrically connecting the third bonding pads to the first substrate pads via the second bonding pads.

The present application provides a chip package structure and an electronic device, which could reduce a chip package thickness and implement ultra-thinning of chip package. The chip package structure includes a chip, a substrate, a lead and a lead protection adhesive; the lead is configured to electrically connect the chip and the substrate; the lead protection adhesive is configured to support the lead, where a highest point of the lead protection adhesive is not higher than a highest point of an upper edge of the lead.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A semiconductor package includes a substrate; a semiconductor chip on a first surface of the substrate; and a plurality of external connection terminals on a second surface of the substrate that is opposite to the first surface. The substrate includes a plurality of wirings configured to electrically connect the semiconductor chip and the plurality of external connection terminals. The plurality of wirings includes a first wiring, and the first wiring includes a first portion and a second portion connected to each other, the second portion overlapping an edge of the semiconductor chip in a vertical direction that is perpendicular to the first surface of the substrate. A second width of the second portion is greater than a first width of the first portion.

A semiconductor device includes an insulating member; a light-receiving element on a front surface of the insulating member; a light-emitting element on the light-receiving element; a first metal terminal electrically connected to the light-emitting element and provided on a back surface of the insulating member; a switching element mounted on the front surface via a metal pad, the switching element being electrically connected to the light-receiving element; and a second metal terminal provided on the back surface and electrically connected to the switching element via the metal pad. The insulating member has a first thickness in a first direction directed from the back surface toward the front surface. The metal pad has a second thickness in the first direction. The second metal terminal has a third thickness in the first direction. The first thickness is less than a combined thickness of the second and third thicknesses.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

An apparatus is provided that includes a die stack having a first die and a second die disposed above a substrate, and a capacitor die disposed in the die stack between the first die and the second die. The capacitor die includes a plurality of integrated circuit capacitors that are configured to be selectively coupled together to form a desired capacitor value coupled to at least one of the first die and the second die.

A semiconductor package is provided. The semiconductor package includes: a package substrate; a first semiconductor chip mounted on the package substrate; a second semiconductor chip mounted on the package substrate; an adhesive film provided on an upper surface the first semiconductor chip and an upper surface of the second semiconductor chip; and a third semiconductor chip attached to the first semiconductor chip, the second semiconductor chip by the adhesive film. The first and second semiconductor chips have different heights, and a thickness of the adhesive film at a portion thereof contacting the first semiconductor chip is different from a thickness of the adhesive film at a portion thereof contacting the second semiconductor chip.