A method of manufacturing display device is disclosed. A substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

An apparatus including a carrier mount having a staircase of steps in an opening in the carrier mount and a plurality of dies, each one of the dies having at least a portion of an edge of a major surface thereof located on one of the steps corresponding to the one of the dies such that the dies form a stack, major surfaces of the dies being substantially parallel in the stack, each of the dies having one or more electro-optical devices thereon.

A method for light-emitting element transferring includes: providing multiple light-emitting elements, each light-emitting element includes a first light-emitting unit, a substrate, and a second light-emitting unit sequentially stacked, the first light-emitting unit includes a first epitaxial structure and a first electrode group stacked on a side of the substrate, the second light-emitting unit includes a second epitaxial structure and a second electrode group stacked on another side of the substrate, and the first light-emitting unit and the second light-emitting unit have different light-emitting colors; providing a display backplane, multiple grooves are defined on the display backplane, a first pad group and a second pad group are provided on side walls of each groove; and embedding the multiple light-emitting elements into the multiple grooves in one-to-one correspondence, where the first electrode group is bonded with the first pad group, and the second electrode group is bonded with the second pad group.

A method for fabricating a three-dimensional (3D) stacked integrated circuit. Pick-and-place strategies are used to stack the source wafers with device layers fabricated using standard two-dimensional (2D) semiconductor fabrication technologies. The source wafers may be stacked in either a sequential or parallel fashion. The stacking may be in a face-to-face, face-to-back, back-to-face or back-to-back fashion. The source wafers that are stacked in a face-to-back, back-to-face or back-to-back fashion may be connected using Through Silicon Vias (TSVs). Alternatively, source wafers that are stacked in a face-to-face fashion may be connected using Inter Layer Vias (ILVs).

Discussed is a semiconductor light emitting device for a display panel, a substrate structure for a display panel, and a display device including the substrate structure. A display device including a semiconductor light emitting device can include a first electrode and a second electrode spaced apart from each other on a predetermined substrate, an insulating layer disposed on the first and second electrodes, a first barrier wall disposed on the insulating layer and including a first assembling hole and a semiconductor light emitting device disposed in the first assembling hole of the first barrier wall. Also, the semiconductor light emitting device can include a light emitting structure, a passivation layer on the light emitting structure, and a first reflective alignment structure disposed in the light emitting structure.

An electronic device is provided, the electronic device includes a driving substrate (13), the driving substrate includes a plurality of circular grooves and a plurality of rectangular grooves, and a plurality of disc-shaped electronic components, at least one disc-shaped electronic component is disposed in at least one circular groove, an alignment element positioned on a top surface of the at least one disc-shaped electronic component, a diameter of the at least one disc-shaped electronic component is defined as R, a diameter of the alignment element is defined as r, a width of at least one rectangular groove among the rectangular grooves is defined as w, and a height of the at least one rectangular groove is defined as H, and the disc-shaped electronic component and the rectangular groove satisfy the condition of (R+r)/2>(w.sup.2+H.sup.2).sup.1/2.

Embodiments provide a method for manufacturing a device. The method comprises providing a first carrier having attached thereto a plurality of chips by means of an adhesive layer of the first carrier, a first surface of the plurality of chips being attached to the first carrier. Further, the method comprises selectively attaching a second surface of a subset of the plurality of chips to a conveyor carrier by means of a structured adhesive layer of the conveyor layer. Further, the method comprises selectively releasing the subset of the plurality of chips from the first carrier by means of debonding corresponding sections of the adhesive layer of the first carrier. Further, the method comprises attaching the first surface of the subset of the plurality of chips to a substrate of the device.

A semiconductor device transfer structure, a display apparatus, and a method of manufacturing the display apparatus are provided. The semiconductor device transfer structure includes: a substrate; an alignment layer provided on the substrate and including a trap configured to seat a semiconductor device; and a transfer layer provided on the alignment layer and including a groove.

A method of picking up and depositing optoelectronic semiconductor chips comprises generating electron-hole pairs in optoelectronic semiconductor chips, thereby generating a dipole electric field in the vicinity of the respective optoelectronic semiconductor chip, generating an electric field by a pick-up tool, and picking up the optoelectronic semiconductor chips during or after generation of the electron-hole pairs by the pick-up tool and depositing them at predetermined locations.

Selective donor plates comprising at least one raised “mesa” and a release layer disposed over the top mesa surface are described, as well as their methods of use and their methods of fabrication. The use of selective donor plates including mesas and a release layer may enable reduced standoff distances and misplacement of components, as well as improve assembly time of devices.