Semiconductor devices having recessed edges with plated structures, semiconductor assemblies formed therefrom, and associated systems and methods are disclosed herein. In one embodiment, a semiconductor assembly includes a first semiconductor device and a second semiconductor device. The first semiconductor device can include an upper surface and a first dielectric layer over the upper surface, the second semiconductor device can include a lower surface and a second dielectric layer over the lower surface, and the first and second dielectric layers can be bonded to couple the first and second semiconductor devices. The first and second dielectric layers can each include a plurality of inwardly extending recesses exposing a plurality of metal structures on the respective upper and lower surfaces, and the upper surface recesses and metal structures can correspond to the lower surface recesses and metal structures. The metal structures can be electrically coupled by plated structures positioned in the recesses.

A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.

A fan-out semiconductor package includes a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposite the active surface; an encapsulant encapsulating at least some portions of the first interconnection member and the semiconductor chip; and a second interconnection member disposed on the first interconnection member and the semiconductor chip. The first interconnection member and the second interconnection member respectively include a plurality of redistribution layers electrically connected to the connection pads of the semiconductor chip, and the semiconductor chip has a groove defined in the active surface and between a peripheral edge of the semiconductor chip and the connection pads of the semiconductor chip.

A method for manufacturing a semiconductor device includes a step of preparing a semiconductor substrate that has a first main surface on one side and a second main surface on the other side, the semiconductor substrate on which a plurality of device forming regions and an intended cutting line that demarcates the plurality of device forming regions are set, a step of forming a first electrode that covers the first main surface in each of the device forming regions, a step of forming a second electrode that covers the second main surface, a step of partially removing the second electrode along the intended cutting line such that the semiconductor substrate is exposed, and forming a removed portion that extends along the intended cutting line, and a step of cutting the semiconductor substrate along the removed portion.

Some implementations provide a device that includes a passive component and a substrate coupled to the passive component, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate. Some implementations provide an integrated device that includes a device layer and a substrate coupled to the device layer, where a surface of the substrate comprises a first irradiated portion. In some implementations, the first irradiated portion is located in an offset portion of the substrate.

A method of manufacture for a semiconductor package includes; forming a molding member on side surfaces of the semiconductor chips, using an adhesive to attach a carrier substrate to upper surfaces of the molding member and the semiconductor chips, using a first blade having a first blade-width to cut away selected portions of the carrier substrate and portions of the adhesive underlying the selected portions of the carrier substrate, and using the first blade to partially cut into an upper surface of the molding member to form a first cutting groove, wherein the selected portions of the carrier substrate are dispose above portions of the molding member between adjacent ones of semiconductor chips, using a second blade having a second blade-width narrower than the first blade-width to cut through a lower surface of the molding member to form a second cutting groove, wherein a combination of the first cutting groove and the second cutting groove separate a package structure including a semiconductor chip supported by a cut portion of the carrier substrate and bonding the package structure to an upper surface of a package substrate.

A system and method. The system may include an integrated circuit (IC) die having two faces and sides. The system may further include mold material surrounding at least the sides of the IC die. The system may further include a redistribution layer and signal pads. The redistribution layer may be positioned between (a) the signal pads and (b) the mold material and the IC die. The redistribution layer may have conductive paths at least connecting the IC die and at least some of the signal pads. A surface of the mold material may abut the redistribution layer. The surface of the mold material may include at least one recessed area having at least one conductive feature connected to at least one of the conductive paths or the IC die.

A solid state drive (SSD) wafer device includes first and second semiconductor wafers coupled together. The first wafer may include a number of memory dies with die bond pads, and the second wafer may include a number of electrical interconnects, each including first and second terminals at opposed ends of the electrical interconnect. When the wafers are bonded together, the first terminals of the second wafer are bonded to the die bond pads of the memory dies of the first wafer. The second terminals are left exposed to couple with an SSD controller, which controls the transfer of data and signals between the memory dies of the first wafer and a host device such as a server in a datacenter.

A semiconductor package structure, an electronic device, and method for manufacturing the same are provided. The semiconductor package structure includes a wiring structure, a first electronic device, a second electronic device, and a protection material. The first electronic device is disposed on the wiring structure. The second electronic device is disposed on the wiring structure. The second electronic device defines a plurality of recesses on a first lateral side surface thereof. The protection material is disposed on the wiring structure and encapsulates the recesses of the second electronic device.

A semiconductor device and method of manufacture are provided wherein semiconductor devices are attached over a semiconductor substrate. An opening is formed within metallization layers over the semiconductor substrate and the semiconductor substrate, and an encapsulant is placed to fill the opening. Once the encapsulant is placed, the semiconductor substrate is singulated to separate the devices. By recessing the material of the metallization layers and forming the opening, delamination damage may be reduced or eliminated.