An integrated circuit IC package with one or more pins protruding from the IC package for electrically connecting the IC package with a printed circuit board PCB is presented. The IC package has a first die with a first electronic component, a second die with a second electronic component, and a conductive plate having a plane surface. The first electronic component may be a semiconductor power device and the second electronic component may be a control circuit. The plane surface of the conductive plate is electrically connected to both a plane surface of the first die and one or more pins such that an electrical connection is established between the first die and the one or more pins. The second die may be arranged on top of the conductive plate. Alternatively, a third die with a third electronic component may be arranged on top of the conductive plate.

The semiconductor device includes a wiring substrate having a plurality of ball lands formed on a lower surface of a core layer, a solder resist film covering the lower surface of the core layer, a via conductor layer penetrating the core layer and connected to the ball lands, and an upper surface wiring formed on the upper surface of the core layer, the upper surface wiring having one end formed as a bonding land and the other end connected to the via conductor layer. The semiconductor device further includes a semiconductor chip arranged on the wiring substrate, a solder ball connected to the ball lands. The solder resist film has an eliminating portion that exposes the lower surface of the core layer, and the upper surface wiring has a thin-wire portion and a thick-wire portion, and when seen in a plan view, the thick-wire portion overlaps the eliminating portion.

Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.

Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag, or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.

To provide a semiconductor device having improved reliability. The semiconductor device has a wiring board, bonding land, semiconductor chip mounted on the wiring board via an adhesive layer and having a pad electrode, bonding wire connecting the pad electrode with the bonding land, and sealing body. The sealing body is, in a circuit formation region, in contact with an organic protection film and, in a scribe region and a region between the pad electrode and the scribe region, in contact with a surface protection film while not in contact with the organic protection film. A first side surface is closer to the circuit formation region side than a second one. The adhesive layer covers entirety of the semiconductor chip back surface and the second side surface of the semiconductor chip. The first side surface is in contact with the sealing body without being covered with the adhesive layer.

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface, a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface, and a second coil formed on the second main surface of the third insulating film. The second insulating film and the third insulating film are formed as a laminated insulating film together. A thickness of the second coil is greater than a thickness of the first coil in a thickness direction of the semiconductor substrate.

Methods of forming a semiconductor package. Implementations include providing a leadframe, coupling a semiconductor die or an electronic component to the leadframe, and encapsulating at least a portion of the semiconductor die or the electronic component using a mold compound leaving two or more leads of the leadframe exposed. The method may also include coating the two or more leads of the leadframe with an electrically conductive layer. The method may include fully electrically and physically singulating one or more tie bars between two or more leads of the leadframe, a lead of the two or more leads and a leadframe flag or any combination thereof. The method may also include singulating the leadframe to form one or more semiconductor packages.

A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.

To provide a semiconductor device having improved reliability. The semiconductor device has a wiring board, bonding land, semiconductor chip mounted on the wiring board via an adhesive layer and having a pad electrode, bonding wire connecting the pad electrode with the bonding land, and sealing body. The sealing body is, in a circuit formation region, in contact with an organic protection film and, in a scribe region and a region between the pad electrode and the scribe region, in contact with a surface protection film while not in contact with the organic protection film. A first side surface is closer to the circuit formation region side than a second one. The adhesive layer covers entirety of the semiconductor chip back surface and the second side surface of the semiconductor chip. The first side surface is in contact with the sealing body without being covered with the adhesive layer.