A scalable switching regulator architecture may include an integrated inductor. The integrated inductor may include vias or pillars in a multi-layer substrate, with selected vias coupled at one end by a redistribution layer of the multi-layer substrate and, variously, coupled at another end by a metal layer of a silicon integrated circuit chip or by a further redistribution layer of the multi-layer substrate. The vias may be coupled to the silicon integrated circuit chip by micro-balls, with the vias and micro-balls arranged in arrays.

A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.

Disclosed is an apparatus including a plurality of vias each having a defined shape, wherein each of the plurality of vias includes a first two-dimensional conductive layer plated on a first side of a substrate, the first two-dimensional conductive layer having the defined shape, a second two-dimensional conductive layer plated on a second side of the substrate, the second two-dimensional conductive layer having the defined shape, and a via conductively coupling the first two-dimensional conductive layer to the second two-dimensional conductive layer. The apparatus further includes a plurality of interconnects configured to conductively couple the plurality of vias, wherein the first two-dimensional conductive layer and the second two-dimensional conductive layer of each of the plurality of vias are perpendicular to the plurality of interconnects.

An integrated circuit (IC) package is described. The IC package includes a first die having a first power delivery network on the first die. The IC package also includes a second die having a second power delivery network on the second die. The first die is stacked on the second die. The IC package further includes package voltage regulators integrated with and coupled to the first die and/or the second die within a package core of the integrated circuit package.

Provided is packages and method of fabricating the same. The package includes a first die, a second die, and an inductor. The second die is bonded to the first die through a bonding structure thereof. The inductor is located in the bonding structure. The inductor includes a spiral pattern parallel to top surfaces of the first die and the second die, and the spiral pattern includes at least a turn.

A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

A method of manufacturing a semiconductor device structure includes forming a bond or joint between a first device and a second device. The first device comprises an integrated passive device (IPD) and a first contact pad disposed over the IPD. The second device comprises a second contact pad. The first contact pad has a first surface with first lateral extents. The second contact pad has a second surface with second lateral extents. The width of the second lateral extents is less than the width of the first lateral extents. The joint structure includes the first contact pad, the second contact pad, and a solder layer interposed therebetween. The solder layer has tapered sidewalls extending in a direction away from the first surface of the first contact pad to the second surface of the second contact pad. At least one of the first surface or the second surface is substantially planar.

VLSI distributed LC resonant clock networks having reduced inductor dimensions as well as simplified decoupling capacitances that are obtained by including one or more compensation capacitors. A compensation capacitor can be added in parallel with a clock capacitance and/or in parallel with a clock inductor. The presence of a compensation capacitance reduces the overhead associated with the inductor and the decoupling capacitor. The compensation capacitor (s) can be selectively switched into the network to create scalable resonant frequencies.

A microelectronic assembly can include a substrate having first and second surfaces and an aperture extending therebetween, the substrate having terminals. The assembly can also include a first microelectronic element having a front surface facing the first surface of the substrate, a second microelectronic element having a front surface facing the first microelectronic element and projecting beyond an edge of the first microelectronic element, first and second leads electrically connecting contacts of the respective first and second microelectronic elements to the terminals, and third leads electrically interconnecting the contacts of the first and second microelectronic elements. The contacts of the first microelectronic element can be exposed at the front surface thereof adjacent the edge thereof. The contacts of the second microelectronic element can be disposed in a central region of the front surface thereof. The first, second, and third leads can have portions aligned with the aperture.

An electric component comprising a terminal electrode and a hot-melt polymer layer formed on the terminal electrode, wherein the hot-melt polymer layer comprises (i) 100 parts by weight of a metal powder and (ii) 1 to 30 parts by weight of a polymer, wherein melt mass-flow rate (MFR) of the polymer is 0.5 to 20 g/10 min. at 120 to 200° C. and 0.3 to 8 kgf.