A semiconductor device includes a semiconductor element, a first lead including a mounting portion for the semiconductor element and a first terminal portion connected to the mounting portion, and a sealing resin covering the semiconductor element and a portion of the first lead. The mounting portion has a mounting-portion front surface and a mounting-portion back surface opposite to each other in a thickness direction, with the semiconductor element mounted on the mounting-portion front surface. The sealing resin includes a resin front surface, a resin back surface and a resin side surface connecting the resin front surface and the resin back surface. The mounting-portion back surface of the first lead is flush with the resin back surface. The first terminal portion includes a first-terminal-portion back surface exposed from the resin back surface, in a manner such that the first-terminal-portion back surface extends to the resin side surface.

A quad flat no-lead (QFN) package structure including a lead frame, a semiconductor die, and an encapsulating material. The lead frame includes a die pad and a plurality of contacts surrounding the die pad. The semiconductor die is disposed on the die pad and electrically connected to the plurality of contacts, wherein a shortest distance between the semiconductor die and a first side of the die pad is shorter than a shortest distance between the semiconductor die to a second side of the die pad, and the first side is opposite to the second side. The encapsulating material encapsulates the lead frame and the semiconductor die and partially exposing the plurality of contacts, wherein an aspect ratio of the QFN package is substantially equal to or greater than 3.

Disclosed is a semiconductor device having overlapped via apertures formed in an encapsulant to outwardly expose solder balls. When different types of semiconductor devices are electrically connected to the solder balls through the overlapped via apertures, flux or solder paste is unlikely to contact sidewall portions of the overlapped via apertures. Therefore, different types of semiconductor devices can be mounted with improved efficiency.

A semiconductor device includes: a first transistor provided with an electron transit layer made of a nitride semiconductor, a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor that includes a second gate electrode, a second source electrode, and a second drain electrode. The first gate electrode and the second drain electrode are electrically connected to each other, while the first source electrode and the second source electrode are not electrically connected to each other.

A semiconductor package includes at least one die attach pad of a leadframe, at least one semiconductor die mounted on the at least one die attach pad; and a plurality of lead terminals disposed around the at least one die attach pad and electrically connected to respective input/output (I/O) pads on the at least one semiconductor die through a plurality of bond wires. The plurality of lead terminals comprises first lead terminals, second lead terminals, and third lead terminals, which are arranged in triple row configuration along at least one side of the semiconductor package. Each of the first lead terminals, second lead terminals, and third lead terminals has an exposed base metal on a cut end thereof.

A semiconductor device includes a predetermined number of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin that covers the semiconductor element and a part of each lead. Each lead includes some portions exposed from the sealing resin. A surface plating layer is formed on at least one of the exposed portions of the respective leads.

Various structures and fabrication methods for leadless plastic chip carrier (QFN) packages which utilize carriers in strip format, wherein the leads (or terminals) are formed to be electrically isolated from one another within each unit and in which the units are formed to be electrically isolated from one another within the strip using chemical etching techniques.

[Problem] An object of the present invention is to provide an electronic part mounting heat-dissipating substrate which enables a circuit for which a power semiconductor in which a large current flows is used to reduce the wiring resistances of a large power operation and improve the heat dissipation.

[Means for Solving] The present invention is an electronic part mounting heat-dissipating substrate which comprises lead frames of wiring pattern shapes formed by conductor plate and an insulating member 130 which is provided between the lead frames 110, wherein a plate surface of a part arrangement surface of said conductor plate and a top surface of said insulating member at a side of said part arrangement surface form one continuous surface, the lead frames have different thicknesses, the thick lead frame 110H is used for a large current signal and the thin lead frame 110L is used for a small current signal, a plate surface of a back surface of the part arrangement surface and a top surface of the insulating member at a side of the back surface at the part arrangement surface-side are formed in an identical plane.

A semiconductor device includes: a single die pad made of a metal or metal alloy and having a first surface, a second surface that is an opposite side of the first surface, and a pair of ground leads protruding from an end edge in plan view; a signal lead arranged between the ground leads; a plurality of leads arranged around the die pad in plan view; a semiconductor chip mounted on the second surface; bonding wires connecting a signal pad of the chip and the signal lead and connecting a ground pad of the chip and the ground leads; and a mold resin covering the die pad, the signal lead, the plurality of leads, the chip, and the bonding wires; wherein an interval between the signal lead and each of the ground leads is narrower than an interval between the plurality of leads.

A power semiconductor package device and a method of preparation the device are disclosed. The package device includes a die paddle, a first pin, a second pin, and a semiconductor chip attached to the die paddle. A first electrode, a second electrode and a third electrode of the semiconductor chip are connected to the first pin, the second pin and the die paddle respectively. A plastic package body covers the semiconductor chip, the die paddle, the first pin and the second pin. The first pin and the second pin are located near two adjacent corners of the plastic package body. The bottom surface and two side surfaces of each of the first pin and the second pin are exposed from the plastic package body. Locking mechanisms are constructed to prevent the first pin and the second pin from falling off the power semiconductor package device during a manufacturing cutting process. Portions of the first pin, portions of the second pin, and portions of the plastic package body can be cut off. Therefore, the size of the power semiconductor package device is reduced.