An integrated circuit (IC) die including a top surface and a bottom surface, a plurality of spaced apart ground connection traces positioned between the top surface and the bottom surface; with a hole in the die exposing the plurality of spaced apart ground connection traces.

A method for fabricating a semiconductor device is disclosed. A packaged semiconductor device is provided having copper ball bonds attached to aluminum pads. The packaged device is treated for at least one cycle at a temperature in the range from about 250 C. to 270 C. for a period of time in the range from about 20 s to 40 s.

A semiconductor package includes a carrier substrate having a top surface, a semiconductor die mounted on the top surface, a plurality of bonding wires connecting the semiconductor die to the carrier substrate, an insulating material coated on the bonding wires, and a molding compound covering the top surface and encapsulating the semiconductor die, the plurality of bonding wires, and the insulating material.

An integrated circuit (IC) die including a top surface and a bottom surface, a plurality of spaced apart ground connection traces positioned between the top surface and the bottom surface; with a hole in the die exposing the plurality of spaced apart ground connection traces.

Quality control testing for a batch of electronic modules. A series of tests are performed on manufactured electronic modules, including tests sensitive to the failure rate of previously tested modules. Specifically, a first test comprised of two phases is performed on the module batch. Further screening is then performed responsive to detection of a wire sweep failure in a subset of failed modules from the first test phase. The further screening is on modules that passed the first test phase and excludes modules that failed the first test phase.

A semiconductor package includes a redistribution structure including redistribution vias extending from redistribution layers into an insulating layer, a plurality of semiconductor chips stacked on the redistribution structure, a molded layer between the redistribution structure and the plurality of semiconductor chips, connection wires electrically connecting corresponding connection pads and redistribution vias, and connection bumps below the redistribution structure. The connection wires include a first portion extending from each of the connection pads at a first inclination angle for a bottom surface of the molded layer, and a second portion extending from the first portion at a second inclination angle, narrower than the first inclination angle for the bottom surface of the molded layer. The second portion has an end surface in contact with corresponding redistribution vias, and each of the redistribution vias has a top surface in contact with the end surface of the second portion.