Gaseous laser systems and related techniques are disclosed. Techniques disclosed herein may be utilized, in accordance with some embodiments, in providing a gaseous laser system with a configuration that provides (A) pump illumination with distinct edge surfaces for an extended depth and (B) an output beam illumination from a resonator cavity with distinct edges in its reflectivity profile, thereby providing (C) pump beam and resonator beam illumination on a volume so that the distinct edge surfaces of its pump and resonator beam illumination are shared-edge surfaces with (D) further edge surfaces of the amplifier volume at the surfaces illuminated directly by the pump or resonator beams, as defined by optical windows and (optionally) by one or more flowing gas curtains depleted of the alkali vapor flowing along those optical windows. Techniques disclosed herein may be implemented, for example, in a diode-pumped alkali laser (DPAL) system, in accordance with some embodiments.

Gaseous laser systems and related techniques are disclosed. Techniques disclosed herein may be utilized, in accordance with some embodiments, in providing a gaseous laser system with a configuration that provides (A) pump illumination with distinct edge surfaces for an extended depth and (B) an output beam illumination from a resonator cavity with distinct edges in its reflectivity profile, thereby providing (C) pump beam and resonator beam illumination on a volume so that the distinct edge surfaces of its pump and resonator beam illumination are shared-edge surfaces with (D) further edge surfaces of the amplifier volume at the surfaces illuminated directly by the pump or resonator beams, as defined by optical windows and (optionally) by one or more flowing gas curtains depleted of the alkali vapor flowing along those optical windows. Techniques disclosed herein may be implemented, for example, in a diode-pumped alkali laser (DPAL) system, in accordance with some embodiments.

A terahertz laser suitable for emitting at least one first electromagnetic radiation, a first emission frequency of which is between 700 and 1200 GHz. The laser comprises an infrared laser source and a resonant cavity arranged to be optically pumped by the infrared laser source, the resonant cavity containing ammonia gas as an amplifier medium and having at least one configuration in which the resonant cavity is a resonant cavity at the first emission frequency. The infrared laser source is a continuous semiconductor laser source capable of exciting molecules of the amplifier medium from an initial energy level to at least one first excited energy level, the molecules of the amplifier medium placed in the first energy level being able to relax through a pure inversion transition for which the relaxation energy corresponds to the first emission frequency.

A terahertz laser suitable for emitting at least one first electromagnetic radiation, a first emission frequency of which is between 700 and 1200 GHz. The laser comprises an infrared laser source and a resonant cavity arranged to be optically pumped by the infrared laser source, the resonant cavity containing ammonia gas as an amplifier medium and having at least one configuration in which the resonant cavity is a resonant cavity at the first emission frequency. The infrared laser source is a continuous semiconductor laser source capable of exciting molecules of the amplifier medium from an initial energy level to at least one first excited energy level, the molecules of the amplifier medium placed in the first energy level being able to relax through a pure inversion transition for which the relaxation energy corresponds to the first emission frequency.

A new optically pumped far infrared (FIR) laser with separate pump beam reflector and FIR output coupler is developed. The configuration of the new FIR laser greatly simplifies the tuning of the laser and enables the optimization of the pump beam absorption without affecting the laser alignment.

A terahertz laser suitable for emitting at least one first electromagnetic radiation, a first emission frequency of which is between 700 and 1200 GHz. The laser comprises an infrared laser source and a resonant cavity arranged to be optically pumped by the infrared laser source, the resonant cavity containing ammonia gas as an amplifier medium and having at least one configuration in which the resonant cavity is a resonant cavity at the first emission frequency. The infrared laser source is a continuous semiconductor laser source capable of exciting molecules of the amplifier medium from an initial energy level to at least one first excited energy level, the molecules of the amplifier medium placed in the first energy level being able to relax through a pure inversion transition for which the relaxation energy corresponds to the first emission frequency.

A terahertz laser suitable for emitting at least one first electromagnetic radiation, a first emission frequency of which is between 700 and 1200 GHz. The laser comprises an infrared laser source and a resonant cavity arranged to be optically pumped by the infrared laser source, the resonant cavity containing ammonia gas as an amplifier medium and having at least one configuration in which the resonant cavity is a resonant cavity at the first emission frequency. The infrared laser source is a continuous semiconductor laser source capable of exciting molecules of the amplifier medium from an initial energy level to at least one first excited energy level, the molecules of the amplifier medium placed in the first energy level being able to relax through a pure inversion transition for which the relaxation energy corresponds to the first emission frequency.

A new optically pumped far infrared (FIR) laser with separate pump beam reflector and FIR output coupler is developed. The configuration of the new FIR laser greatly simplifies the tuning of the laser and enables the optimization of the pump beam absorption without affecting the laser alignment.

A gas laser, including: a semiconductor laser, an optical beam-shaping system, a pair of electrodes, a discharge tube, a rear mirror, and an output mirror. The pair of electrodes includes two electrodes. The electrodes are symmetrically disposed at an outer layer of the discharge tube in parallel. The electrodes are connected to a radio-frequency power supply via a matching network, and the electrodes operate to modify working gas in the discharge tube through radio-frequency discharge. The rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively. The rear mirror, taken together with the output mirror and the discharge tube, form a resonant cavity. The output mirror is configured to output a laser beam.

A gas laser, including: a semiconductor laser, an optical beam-shaping system, a pair of electrodes, a discharge tube, a rear mirror, and an output mirror. The pair of electrodes includes two electrodes. The electrodes are symmetrically disposed at an outer layer of the discharge tube in parallel. The electrodes are connected to a radio-frequency power supply via a matching network, and the electrodes operate to modify working gas in the discharge tube through radio-frequency discharge. The rear mirror and the output mirror are disposed at two end surfaces of the discharge tube, respectively. The rear mirror, taken together with the output mirror and the discharge tube, form a resonant cavity. The output mirror is configured to output a laser beam.