An optoelectronic component is specified comprising: at least one radiation-emitting semiconductor chip (1) which during operation emits electromagnetic radiation of a first wavelength range, and an absorber, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength range, and the absorber absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light.

An optoelectronic component is specified comprising: at least one radiation-emitting semiconductor chip (1) which during operation emits electromagnetic radiation of a first wavelength range, and an absorber, wherein the absorber is predominantly transmissive to the emitted electromagnetic radiation of the first wavelength range, and the absorber absorbs at least 70% of the total radiation intensity of the electromagnetic spectrum of the visible light of the ambient light.

A semiconductor package is manufactured by physically attaching a side emitting laser diode to a floor portion of a recessed flat no-leads (FNL) package having a wall extending from and surrounding a perimeter of a recessed floor portion. The attached side emitting laser diode is oriented to direct a laser beam toward an opposing portion of the wall. The FNL package is singulated into a first piece and a second piece along a singulation plane through the FNL package wall and floor portion between the side emitting laser diode and the opposing portion of the wall. After singulation the opposing portion of the wall is in the second piece and the side emitting laser diode is in the first piece.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 μm or more and 0.01 μm or less.

A chip on submodule includes a submount having a top surface, bottom surface and side surfaces. A positive electrode plate is affixed to a first portion of one side surface, the top surface and a first portion of the bottom surface. The positive electrode plated first portion of the one side surface and the top surface are interconnected. A connector electrically connects the positive electrode plated top surface to the first portion of the bottom surface. A negative electrode plate is affixed to a second portion of the one side surface and a second portion of the bottom surface. The negative electrode plated second portion of the one side surface and second portion of the bottom surface are interconnected. A laser diode is affixed to the positive electrode plated first portion of the one side surface and connected to the negative electrode plated second portion of the one side surface.

A light emitting module includes a light emitting device, a heat dissipating plate, and a holder. The light emitting device has a light extraction window and a plurality of electrodes. The light emitting device is secured to the heat dissipating plate. The heat dissipating plate is secured to the holder. The holder includes a plurality of terminals respectively connected to the electrodes of the light emitting device. The heat dissipating plate includes an exposed portion exposed from the holder when viewed from a side of the light emitting module on which the light extraction window of the light emitting device is provided.

A surface mount laser package for a side-looking semiconductor laser has a substantially planar leadframe with a component side and a board attach side. The component side has a conductive die attach pad and a plurality of wire bond pads. A laser die has an anode surface and a cathode surface, where the cathode surface is mounted to the conductive die attach pad. A plurality of bond wires span between the laser die anode surface and a wire bond pad. A molding encases the laser die and the plurality of bond wired on the component side of the leadframe and also lies between the conductive die attach pad and each of the wire bond pads within a plane of the leadframe. The conductive die attach pad has a metallization layer on the leadframe and each of the bond pads has a metallization layer on the leadframe.

A laser package is mounted on the printed circuit board. At least one thermal via extends through the printed circuit board, coupled to the laser package. A thermal bridge is coupled to the at least one thermal via on the bottom of the printed circuit board. A thermal paste connects the thermal bridge to a conductive ground plane on the bottom of the printed circuit board, and to a mechanical housing.

In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.