The invention is a passively mode-locked ultrashort pulse fiber laser for generating ultrashort laser pulses, including a resonator in a figure-of-eight configuration, wherein the resonator has a main ring and a secondary ring optically coupled thereto designed as a non-linear Sagnac interferometer, and wherein the main ring and the secondary ring are constructed of polarization-maintaining optical fibers, and the main ring and/or secondary ring have a fiber section designed as a laser-active medium, wherein the laser-active medium is optically pumped through an externally-coupled pump light source which is also comprised, wherein the ultrashort pulse fiber laser is developed in that a separate optical unit is provided in the resonator as a dispersion compensation unit for compensating a group delay dispersion of the ultrashort laser pulses.

A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.

A driving condition for causing the tunable wavelength laser to conduct laser oscillation at a first wavelength is acquired. a driving condition for causing the tunable wavelength laser to conduct laser oscillation at the second wavelength is calculated. The tunable wavelength laser is driven based on the driving condition of the second wavelength, feedback control that changes the driving condition of the tunable wavelength laser based on a difference between an output of the wavelength sensing unit and the target value is performed, and the tunable wavelength laser is caused to oscillate at the second wavelength. The driving condition of the tunable wavelength laser obtained by the feedback control when oscillation has occurred at the second wavelength is stored in the memory. Thereafter, the tunable wavelength laser is driven with reference to the stored driving condition of the tunable wavelength laser.

A light detection and ranging (LIDAR) system may include a laser source configured to emit one or more optical beams; a scanning optical system configured to scan the one or more optical beams over a scene and capture reflections of the one or more optical beams from the scene; a measurement system configured to divide the scene into a plurality of pixels, the measurement system comprising a detector configured to detect a return signal from multiple pixels of the plurality of pixels as the one or more optical beams are scanned across the scene, and a data processor configured to perform data processing from the return signal from the multiple pixels to determine a range and/or range rate for each pixel of the scene.

Provided is a semiconductor laser device in which a distributed feedback laser part and an electro-absorption modulator part are formed on the same semiconductor substrate, and laser light emitted from the laser part is emitted from an emission end face of the modulator part. The laser part includes a first diffraction grating formed to extend in a direction of an optical axis of the laser light and the modulator part partially including a second diffraction grating formed to extend in the direction of the optical axis of the laser. A non-diffraction grating region in which a diffraction grating is not formed is interposed between the second diffraction grating of the modulator part and an emission end face of the laser part from which the laser light is emitted to the modulator part.

Frequency modulated lasers, LIDAR systems, and methods of controlling laser are disclosed. A laser source emits an optical beam having an optical frequency that changes in response to a signal applied to an input of the laser source. A laser driver that generates the signal applied to the input to cause the optical frequency to vary in accordance with a periodic frequency versus time function. The laser driver generates the signal for a current period of the periodic frequency versus time function based, at least in part, on optical frequency versus time measurements of one or more prior periods of the periodic frequency versus time function.

A method for tuning an emission wavelength of a laser device, including: acquiring a drive condition of a wavelength tunable laser diode to make the wavelength tunable laser diode oscillate at a wavelength from a memory; driving a first thermo-cooler and a first heater based on the drive condition of the wavelength tunable laser diode; determining whether respective control values of the first thermo-cooler and the first heater are reached within a first range of target values; and driving a gain region after the control values have been reached within the first range.

A recording head includes an external cavity laser with an externally mounted part having an active region. The external cavity laser also includes a channel waveguide that delivers light towards a media-facing surface. A near-field transducer functions as a reflector, either alone or in combination with a Bragg grating in the channel waveguide. A reflective back facet of the externally mounted part and the reflector define a resonator of the external cavity laser.

A semiconductor laser may include an active region having a longitudinal axis, a rear facet end and a front facet end. The front facet end emitting an output beam of the semiconductor laser. The semiconductor laser may include a plurality of diffraction gratings positioned along the longitudinal axis of the active region. The plurality of diffraction gratings including a first diffraction grating positioned proximate the rear facet end of the active region and at least one additional diffraction grating positioned longitudinally between the first diffraction grating and the front facet. The first diffraction grating having a first kappa value and the at least one additional diffraction grating having at least a second kappa value, the first kappa value being greater than the second kappa value.

Semiconductors lasers are disclosed having an active region having a longitudinal axis, a first facet end, and a second facet end. The second facet end emitting the main output beam of light from of the respective semiconductor laser. The first facet end may have a low-reflection coating. The first facet end may be non-perpendicular to the longitudinal axis of the active region. The semiconductor lasers may be distributed feedback (DFB) lasers having a plurality of diffraction gratings along the longitudinal axis of the active region. The plurality of diffraction grating may include a first diffraction grating positioned proximate the first end of the active region, a second diffraction grating positioned proximate the second end of the active region, and a third diffraction grating positioned between the first diffraction grating and the second diffraction grating. The first diffraction grating may be spaced apart from the third diffraction grating along the longitudinal axis of the active region by a first distance. The second diffraction grating may be spaced apart from the third diffraction grating along the longitudinal axis of the active region by a second distance. Each of the first distance and the second distance being greater than zero.