Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.

A surface-emitting laser includes a lower DBR layer, a cavity layer, and an upper DBR layer that are stacked in this order on top of a substrate, wherein the lower DBR layer has a first DBR layer, a contact layer, and a second DBR layer that are stacked in this order on top of the substrate, wherein the first DBR layer and the second DBR layer each include a plurality of first layers and a plurality of second layers that are alternately stacked, wherein the first layers and the second layers are each a semiconductor layer including aluminum, wherein a composition ratio of the aluminum of each first layer is lower than a composition ratio of the aluminum of each second layer, and wherein the second DBR layer includes 12 or more and 20 or fewer pairs of the first layers and the second layers.

A passively Q-switched laser with intracavity pumping is described. The passively Q-switched laser has an optically pumped gain element and a saturable absorber element. The optically pumped gain element is situated in an extended cavity of a VECSEL (Vertical Extended Cavity Surface Emitting Laser) so that the gain element is pumped by a circulating pump beam of the VECSEL. The passively Q-switched laser may produce output pulses at an eye-safe wavelength using a low gain laser transition and may use a plurality of surface emitting gain regions to pump the passively Q-switched laser.

A microcavity pixel design and structure allowing for tuning the optical cavity length of the microcavity of a microcavity pixel structure. This is achieved by including an intermediate electrode in the device which has an overhang region to form a connecting area to a bottom electrode, alleviating design restrictions in material type and dimensions throughout the optical microcavity tuning process. A method for the fabrication of a multi-colored microcavity pixel array facilitating the use of blanket deposition methods for select layers within a microcavity pixel structure.

An optical sensor system includes a set of epitaxial layers formed on a semiconductor substrate. The set of epitaxial layers defines a semiconductor laser having a first multiple quantum well (MQW) structure. Electromagnetic radiation is generated by the first MQW structure, emitted from the first MQW structure, and self-mixed with a portion of the emitted electromagnetic radiation that is returned to the first MQW structure. The set of epitaxial layers also defines a second MQW structure operable to generate a first photocurrent responsive to detecting a first emission of the semiconductor laser, and a third MQW structure operable to generate a second photocurrent responsive to detecting a second emission of the semiconductor laser. The optical sensor system also includes a circuit configured to generate a self-mixing interferometry (SMI) signal by combining the first photocurrent and the second photocurrent.

A light-emitting device includes a light diffusing member that diffuses light emitted from a light source so that an object to be measured is irradiated with the light; and a holding unit that holds the light diffusing member and is provided on a wire connected to the light source so as to be located in an uncoated region of the wire.

[Object] To provide a vertical cavity surface emitting laser element having excellent electric responsiveness and high productivity and reliability, a method of producing the vertical cavity surface emitting laser element, and a photoelectric conversion apparatus.

[Solving Means] A vertical cavity surface emitting laser element according to the present technology includes: a semiconductor stacked body. The semiconductor stacked body is a semiconductor stacked body that includes a first mirror having a first conductive type, a second mirror that has a second conductive type and causes optical resonance together with the first mirror, an active layer provided between the first mirror and the second mirror, and a confinement layer that is provided between the first mirror and the second mirror and has a non-oxidized region and an oxidized region, the non-oxidized region being formed of a first material, the oxidized region being provided around the non-oxidized region and being formed of a second material obtained by oxidizing the first material, and has a mesa having an outer peripheral surface from which end surfaces of the active layer and the confinement layer are exposed and an ion implantation region that is a region into which ions have been implanted, is formed to reach a predetermined depth in the active layer and the confinement layer from the outer peripheral surface, and is separated from the non-oxidized region.

A method of manufacturing a vertical cavity surface emitting laser element including a first reflector including a nitride semiconductor multilayer film, the method includes: growing a first semiconductor layer consisting of a group III semiconductor containing aluminum and indium, the growing of the first semiconductor layer consisting of growing a first layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas, and growing a second layer by supplying an aluminum source gas, an indium source gas, and a nitrogen source gas so that an indium composition ratio of the second layer is higher than an indium composition ratio of the first layer; and growing a second semiconductor layer consisting of gallium nitride. The growing of the first semiconductor layer and the growing of the second semiconductor are repeated alternately to form the nitride semiconductor multilayer film constituting the first reflector.

A method of forming and a random Distributed Bragg Reflector (DBR) is disclosed. The random DBR includes a substrate and a plurality of alternating layers of lattice-matched nanoporous GaN (NP-GaN) and GaN formed on a top surface of the substrate, wherein at least one of the alternating layers has a thickness of λ/4n and an adjacent one of the alternating layers does not have a thickness of λ/4n, wherein λ is a wavelength of incident radiation and n is the refractive index of a particular layer of the plurality of alternating layers.

A light emitting element (10A) of the present disclosure includes: a stacked structure (20) in which a first compound semiconductor layer (21) having a first surface (21a) and a second surface (21b), an active layer (23), and a second compound semiconductor layer (22) having a first surface (22a) and a second surface (22b) are stacked; a first light reflecting layer (41) formed on a first surface side of the first compound semiconductor layer (21) and having a convex shape in a direction away from the active layer (23); and a second light reflecting layer (42) formed on a second surface side of the second compound semiconductor layer (22) and having a flat shape, in which a partition wall (24) extending in a stacking direction of the stacked structure (20) is formed so as to surround the first light reflecting layer (41).