A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.

A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

A method for producing a semiconductor optical device includes the steps of bonding a semiconductor chip to an SOI substrate having a waveguide, the semiconductor chip having an optical gain and including a first cladding layer, a core layer, and a second cladding layer that contain III-V group compound semiconductors and are sequentially stacked in this order, forming a covered portion with a first insulating layer on the second cladding layer, etching partway in the thickness direction the second cladding layer exposed from the first insulating film, forming a second insulating film covering from the covered portion to a part of a remaining portion of the second cladding layer, and forming a first tapered portion that is disposed on the waveguide and tapered along the extending direction of the waveguide by etching the core layer and the second cladding layer exposed from the second insulating film.

A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.

According to an embodiment, a wavelength tunable laser comprising a gain region and a wavelength tunable area is disclosed. The wavelength tunable area comprises: a lower clad layer; a passive optical waveguide positioned on the lower clad layer; an upper clad layer positioned on the passive optical waveguide; a drive electrode positioned on the upper clad layer; a current blocking layer positioned on the drive electrode; a heater positioned on the current blocking layer; and a first insulating groove and a second insulating groove which are positioned so as to face each other with the passive optical waveguide therebetween.

An insulating film (10) having an opening (11) is formed on a contact layer (7). A shape stabilization layer (8) having an inclined surface (9) is formed on the contact layer (7) in a peripheral portion of the opening (11). An underlying metal (12) covers an upper surface of the contact layer (7) exposed through the opening (11) and the inclined surface (9). A plating (13) is formed on the underlying metal (12).

Some embodiments relate to a method for forming a vertical cavity surface emitting laser (VCSEL) structure. The method includes forming an optically active layer over a lower reflective layer and forming an upper reflector over the optically active layer. A first spacer is formed along sidewalls of the upper reflector. An oxidation process is performed with the first spacer in place to oxidize a peripheral region of the optically active layer. A first etch process is performed on the lower reflective layer and the oxidized peripheral region, thereby forming a lower reflector and an optically active region.

An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.

VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.