An optical semiconductor device includes a substrate, a semiconductor multilayer which is formed on the substrate, and includes an optical functional layer, an insulating film formed on the semiconductor multilayer, and an electrode formed on a part of the insulating film. The insulating film covers the semiconductor multilayer except for a region in which the semiconductor multilayer and the electrode are electrically connected to each other. At least a part of a region of the insulating film that is overlapped with the electrode is thinner than a region of the insulating film that is not overlapped with the electrode.

An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

According to embodiments of the present invention, a laser source is provided. The laser source includes a photonic crystal structure including a first domain having a plurality of first holes defined therein, the first domain being associated with a first set of Chern numbers, and a second domain having a plurality of second holes defined therein, the second domain being associated with a second set of Chern numbers, wherein the plurality of first holes and the plurality of second holes are arranged to define an interface region between the first domain and the second domain, the interface region defining an optical cavity for lasing. According to further embodiments of the present invention, a method for forming a laser source is also provided.

A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress.

A light emitting device includes: a light emitting element; and a wavelength conversion member including: a wavelength conversion part configured to convert light emitted from the light emitting element into light having a different wavelength and to output the light having the different wavelength, an enclosing part enclosing the wavelength conversion part, and a conducting layer disposed on the enclosing part and surrounding the wavelength conversion part. The conducting layer comprises ruthenium oxide.

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

A laser diode chip is described, comprising: an n-type semiconductor region (3), a p-type semiconductor region (5), and an active layer (4) arranged between the n-type semiconductor region (3) and the p-type semiconductor region (5), an n-type contact (9) and a p-type contact (8), at least one heating element (14) arranged on a side of the laser diode chip facing the p-type semiconductor region (5), the heating element (14) functioning as a resistance heater, and at least one metallic seed layer (7, 11), wherein the heating element comprises a part (11) of the seed layer, and wherein the p-type contact (8) is arranged on a further part (7) of the seed layer (7, 11).

The application concerns a method of manufacturing optoelectronic semiconductor components (1) comprising the following steps: A) Growing a semiconductor layer sequence (3) for generating radiation onto a growth substrate (2), B) Structuring the semiconductor layer sequence (3) into emitter strands (11) so that the semiconductor layer sequence (3) is removed in gaps (12) between adjacent emitter strands (11), C) Applying a passivation layer (4), the semiconductor layer sequence (3) at waveguide contacts (51) remote from the growth substrate (2) and the gaps (12) remaining at least partially free, D) Producing at least one metal layer (50), which extends from the waveguide contacts (51) into the gaps (12), E) Replacing the growth substrate (2) with a carrier (6), F) Making vias (53) in the carrier (6) so that the metal layer (50) and underside contacts (52) of the semiconductor layer sequence (3) facing the carrier (6) are electrically contacted, and removing the carrier (6) between at least some of the emitter strands (11) and between emitter units (13) following one another along the emitter strands (11), and G) Breaking the semiconductor layer sequence (3) between the emitter units (13), so that facets (31) are formed.

A method of removing semiconducting layers from a substrate, in particular, III-nitride-based semiconductor layers from a III-nitride-based substrate, with an attached film, using a peeling technique. The method comprises forming the semiconductor layers into island-like patterns on the substrate via an epitaxial lateral overgrowth method, with a horizontal trench extending inwards from the sides of the layers. Stress is induced in the layers by raising or lowering the temperature, and applying pressure to the attached film, such that the film firmly fits a shape of the layers. Differences in thermal expansion between the substrate and the film attached to the layers initiates a crack at an interface between the layers and the substrate, so that the layers can be removed from the substrate. Once the layers are removed, the substrate can be recycled, resulting in cost savings for device fabrication.