A semiconductor light-emitting element includes: a substrate; an n-type clad layer above the substrate; an active layer above the n-type clad layer; and a p-type clad layer above the active layer. The active layer includes: a well layer; an n-side first barrier layer on an n-type clad layer side of the well layer; and a p-side barrier layer on a p-type clad layer side of the well layer. The p-side barrier layer comprises In. The n-side first barrier layer has an In composition ratio lower than an In composition ratio of the p-side barrier layer. The n-side first barrier layer has a band gap energy smaller than a band gap energy of the p-side barrier layer.

A semiconductor optical element includes: a first conductivity type semiconductor substrate; and a laminated body disposed on the first conductivity type semiconductor substrate. The laminated body includes, in the following order from a side of the first conductivity type semiconductor substrate: a first conductivity type semiconductor layer; an active layer; a second conductivity type semiconductor layer; and a second conductivity type contact layer. The second conductivity type semiconductor layer includes: a carbon-doped semiconductor layer in which carbon is doped as a dopant in a compound semiconductor; and a group 2 element-doped semiconductor layer in which a group 2 element is doped as a dopant in a compound semiconductor. The carbon-doped semiconductor layer is disposed at a position closer to the active layer than the group 2 element-doped semiconductor layer.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

The present invention relates to a device for generating laser radiation.

An object of the present invention is to indicate a laser diode which simultaneously has a high degree of efficiency and a low degree of far field divergence.

The diode laser according to the invention comprises a current barrier (5), characterized in that the current barrier (5) extends along a third axis (X), wherein the current barrier (5) has at least one opening, and a first width (W1) of the opening of the current barrier (5) along the third axis (X) is smaller than a second width (W2) of the metal p-contact (8) along the third axis (X).

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

A semiconductor laser element includes a semiconductor laminated structure that has a substrate, an n type cladding layer disposed at a front surface side of the substrate, an active layer disposed at an opposite side of the n type cladding layer to the substrate, and p type cladding layers disposed at an opposite side of the active layer to the n type cladding layer. The active layer includes a quantum well layer having a tensile strain for generating TM mode oscillation and the n type cladding layer and the p type cladding layers are respectively constituted of AlGaAs layers.

An optical semiconductor device is provided with: a mesa in which a first conductivity type cladding layer, an active layer, and a second conductivity type first cladding layer having a second conductivity type are sequentially laminated on a surface of a first conductivity type substrate; a buried layer that buries both sides of the mesa with a top of the mesa being exposed; and a second conductivity type second cladding layer that buries the buried layer and the top of the mesa exposed from the buried layer, wherein the buried layer includes a layer doped with a semi-insulating material, and a boundary between the second conductivity type first cladding layer and the buried layer is inclined so that a width of the second conductivity-type first cladding layer becomes narrower toward the top of the mesa.

A laser diode chip is described, comprising: an n-type semiconductor region (3), a p-type semiconductor region (5), and an active layer (4) arranged between the n-type semiconductor region (3) and the p-type semiconductor region (5), an n-type contact (9) and a p-type contact (8), at least one heating element (14) arranged on a side of the laser diode chip facing the p-type semiconductor region (5), the heating element (14) functioning as a resistance heater, and at least one metallic seed layer (7, 11), wherein the heating element comprises a part (11) of the seed layer, and wherein the p-type contact (8) is arranged on a further part (7) of the seed layer (7, 11).

A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.

A device and a method to produce an augmented-laser (ATLAS) comprising a bi-stable resistive system (BRS) integrated in series with a semiconductor laser. The laser exhibits reduction/inhibition of the Spontaneous Emission (SE) below lasing threshold by leveraging the abrupt resistance switch of the BRS. The laser system comprises a semiconductor laser and a BRS operating as a reversible switch. The BRS operates in a high resistive state in which a semiconductor laser is below a lasing threshold and emitting in a reduced spontaneous emission regime, and a low resistive state in which a semiconductor laser is above or equal to a lasing threshold and emitting in a stimulated emission regime. The BRS operating as a reversible switch is electrically connected in series across two independent chips or on a single wafer. The BRS is formed using insulator-to-metal transition (IMT) materials or is formed using threshold-switching selectors (TSS).