The disclosure describes VCSELs operable to produce very narrow divergent light beams. The narrow divergent beam can be obtained, in part, by incorporating an additional epitaxial layer so as to increase the cavity length of the VCSEL. The increased cavity length can result in higher power in fewer larger diameter transverse modes, which can significantly reduce the output beam divergence. The additional epitaxial layer can be incorporated, for example, into a top-emitting VCSEL or bottom-emitting VCSEL.

An apparatus is provided to receive a three dimensional (3D) map of at least a part of a body of a user. A light emitting device is included with tunable VCSEL laser with one or more active regions having quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure one or more tunnel junction (TJ) 20s provided. One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine the apertures, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to an application of the VCSEL laser. The VCSEL laser includes an HCG grating and a bottom DBR. A user monitoring device 100 includes the VCSEL laser. A user monitoring device that includes the VCSEL laser 10. The light emitting device is included in a camera of a communication device.

The present disclosure is a method for manufacturing a quantum cascade laser device comprising the steps of: virtually injecting electrons having an energy value from zero to an energy value of a conduction band edge of the well layer into a starting barrier layer; calculating energy dependence of transmissivity of the electrons transmitted from the terminal barrier layer; calculating energy values of local maximum values and the number of the local maximum values; calculating eigenvalues and eigenfunctions by solving a Schrdinger equation for each local maximum value by using each energy value of the local maximum values as an initial value; and setting a laser oscillation wavelength on the basis of the eigenvalues calculated for each of the local maximum values.

A semiconductor laser device includes a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The insulating film has a pair of contact layer covering parts that cover both end regions of the electrode connection surface in the X direction, and a first opening that exposes a portion of the electrode connection surface. The first electrode is connected to the electrode connection surface exposed from the first opening. The insulation coverage factor, which is the ratio of the width of the pair of contact layer covering parts in the X direction to the width of the electrode connection surface in the X direction, is 10% or less. The thickness of the contact layer in the Z direction is 2 m or greater.

The present invention includes an n-type semiconductor layer formed on a first reflective mirror, an active layer made of multiple quantum wells formed on the n-type semiconductor layer, a final barrier layer formed on the final quantum well of the active layer, an electron blocking layer formed on the final barrier layer, a p-type semiconductor layer formed on the electron blocking layer, a dielectric spacer layer formed on the p-type semiconductor layer, and a second reflective mirror formed on the spacer layer. The number of antinodes of a standing wave due to emitted light from the active layer, included in the electron blocking layer and the p-type semiconductor layer is 1, the number of nodes is 0 or 1, and Expression (3) is satisfied for the active layer and the final barrier layer.

An apparatus is provided to receive a three-dimensional (3D) map of at least a part of a body of a user. A tunable VCSEL laser has one or more active regions having quantum wells and barriers, the active regions surrounded by one or more p-n junctions, the one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ), one or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process with a VCSEL output. Optics collect and focus light emitted by the output of the VCSEL laser defining a baseline light pattern having a given pitch, corresponding to a two-dimensional pattern of the optical emitters on a substrate, producing and projecting multiple overlapping replicas of the baseline light pattern with a composite pattern density that is finer than the pitch of the baseline light pattern.

A VCSEL-based optical device having a common anode and a plurality of insulated cathode structures, and an optical module are disclosed. According to one aspect of the present embodiment, provided are: a VCSEL having a common anode structure so as to have higher optical output at a predetermined voltage; and a VCSEL array.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

A semiconductor optical device includes a first n-type III-V group compound semiconductor layer, an active layer, a tunnel junction structure including a p-type III-V group compound semiconductor layer and a second n-type III-V group compound semiconductor layer, and a third n-type III-V group compound semiconductor layer. The first n-type III-V group compound semiconductor layer, the active layer, the p-type III-V group compound semiconductor layer, the second n-type III-V group compound semiconductor layer, and the third n-type III-V group compound semiconductor layer are stacked in this order. The second n-type III-V group compound semiconductor layer has an n-type dopant concentration higher than an n-type dopant concentration of the third n-type III-V group compound semiconductor layer. The p-type III-V group compound semiconductor layer has a strain.

A semiconductor light emitting device comprises a current confinement layer and a semiconductor light emitting stack. The semiconductor light emitting stack is disposed on the current confinement layer and has a bottom surface in contact with the current confinement layer. The current confinement layer includes an insulating layer and a plurality of conductive portions. The plurality of conductive portions are disposed in the insulating layer in contact with the bottom surface. An area ratio of the plurality of conductive portions to the bottom surface is 7% or more and 15% or less.