A reflective structure includes an input/output port and an optical splitter coupled to the input/output port. The optical splitter has a first branch and a second branch. The reflective structure also includes a first resonant cavity optically coupled to the first branch of the optical splitter. The first resonant cavity comprises a first set of reflectors and a first waveguide region disposed between the first set of reflectors. The reflective structure further includes a second resonant cavity optically coupled to the second branch of the optical splitter. The second resonant cavity comprises a second set of reflectors and a second waveguide region disposed between the second set of reflectors.

A semiconductor laser device includes: a semiconductor laser element including an emitter that emits emission light; a lens that transmits the emission light emitted from the emitter; a driver that supports the lens in a state in which a position and an orientation of the lens are changeable; a detector that detects an intensity distribution of the emission light emitted from the emitter and transmitted through the lens; and a controller that, based on a detection result of the detector, controls at least one of the position or the orientation of the lens by driving the driver to cause the intensity distribution of the emission light detected by the detector to be a predetermined light intensity distribution.

An optical transmitter includes: a set of reflective semiconductor optical amplifiers (RSOAs) or other reflective gain media, a set of ring filters, a set of intermediate waveguides, a shared waveguide, a shared loop mirror, and an output waveguide. Each intermediate waveguide channels light from an RSOA in proximity to an associated ring filter to cause optically coupled light to circulate in the associated ring filter. The shared waveguide is coupled to the shared loop mirror, and is located in proximity to the set of ring filters, so that light circulating in each ring filter causes optically coupled light to flow in the shared waveguide. Each RSOA forms a lasing cavity with the shared loop reflector, wherein each lasing cavity has a different wavelength associated with a resonance of its associated ring filter. The output waveguide is optically coupled to the shared loop mirror and includes an electro-optical modulator.

In various embodiments, the concentration and deposition of siloxane materials within components of laser systems, such as laser resonators, is reduced or minimized utilizing mitigation systems that may also supply gas having low siloxane levels into multiple different components in series or in parallel.

A multi-channel laser source, including: a bus waveguide coupled, at an output end of the bus waveguide, to an output of the multi-channel laser source; a first semiconductor optical amplifier; a first back mirror; a first wavelength-dependent coupler, having a first resonant wavelength, on the bus waveguide; a second semiconductor optical amplifier; a second back mirror; and a second wavelength-dependent coupler, on the bus waveguide, having a second resonant wavelength, different from the first resonant wavelength. In some embodiments the first semiconductor optical amplifier is coupled to the bus waveguide by the first wavelength-dependent coupler, which is nearer to the output end of the bus waveguide than the second wavelength-dependent coupler, the second semiconductor optical amplifier is coupled to the bus waveguide by the second wavelength-dependent coupler, and the first wavelength-dependent coupler is configured to transmit light, at the second resonant wavelength, along the bus waveguide.

A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.

Apparatus and methods for altering one or more spectral, spatial, or temporal characteristics of a light-emitting device are disclosed. Generally, such apparatus may include a volume Bragg grating (VBG) element that receives input light generated by a light-emitting device, conditions one or more characteristics of the input light, and causes the light-emitting device to generate light having the one or more characteristics of the conditioned light.

The present invention provides a photonic integrated circuit, system, apparatus and method which can be used as an optical transmitter in a system, for example in a telecommunication system. According to the various embodiments of the invention, the circuit includes several optical devices, wherein some are passive and others have gain, which constructed and connected with the specific characteristics, leads to a multi-wavelength transmitter with tunable operation band.

Laser diodes formed on a common substrate with layers of suitable thickness and refractive indices produce output beams that are coherently coupled. A phase mask can be situated to produce phase differences in one or more of the output beams to produce a common wavefront phase. The phase-corrected beams propagate with reduced angular divergence than conventional lasers that are not coherently coupled, and the coherently coupled laser diodes can provide higher beam brightness, enhanced beam parameter product, and superior power coupled into doped fibers in fiber lasers.

The system and method for modifying the output beam parameters of a plurality of laser diode array sources comprises scalable pump sources for use with diode pumped alkali lasers. The present invention optimizes a diode laser pump source by spectrally-narrowing stacks of diode laser array bars using a single external cavity outfitted with a proprietary step-mirror and cylindrical optical elements. The system and method of the present invention multiplies by one-hundred fold the number of stacks that can be narrowed, vastly increasing the attainable power output by utilizing beam-splitters.