A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.

A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators. Thin hafnium zirconium oxide (HZO) films are engineered with atomic layer deposition (ALD) to demonstrate large piezoelectric ferroelectric properties (piezoelectric coefficient e.sub.31,HZO23e.sub.31,AlN. Various electrical and optical characterization schemes are also used as test-vehicles to characterize ferroelectric and piezoelectric properties, including isolated 10 nm HZO- and 120 nm AlN-transduction ports. The low-temperature and truly conformal nature of ALD process of HZO offers substantial advantages over conventional magnetronsputtered/MOCVD films, including CMOS-compatibility and sidewall transducer integration.

A method is provided for detecting a perturbation with respect to an initial state, of a device including at least one resonant mechanical element exhibiting a physical parameter sensitive to a perturbation such that the said perturbation modifies the resonance frequency of the said resonant mechanical element. A device is provided for detecting a perturbation by hysteretic cycle having at least one electromechanical resonator with nonlinear behavior and means for actuation and detection of the reception signal via a transducer so as to analyze the response signal implementing the method. A mass sensor and a mass spectrometer using the device are also provided.