A micro-acoustic wave device is proposed for application in ultrahigh frequency range. The device uses a thin film piezoelectric material stacked on a carrier substrate. Additionally, a material is embedded between carrier substrate and piezoelectric thin film that decouples the acoustic of these layers. With this approach it is possible to achieve very high Q factor even for longitudinal waves, which are required for high frequency applications.

Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

Embodiments may relate to a die such as an acoustic wave resonator (AWR) die. The die may include a first filter and a second filter in the die body. The die may further include an electromagnetic interference (EMI) structure that surrounds at least one of the filters. Other embodiments may be described or claimed.

An electronic device includes a support substrate, a piezoelectric layer that is provided on the support substrate, a functional element including an electrode provided on a surface of the piezoelectric layer, a metallic frame body that is provided on the support substrate so as to surround the piezoelectric layer and the functional element in a plan view, a metallic lid that is provided on the frame body so as to form a space between the lid and the support substrate, and seals the functional element into the space, and a columnar body that is provided between the support substrate and the lid in the space.

A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.

A filter device includes a substrate and first to third filters provided on the substrate and each including an input terminal and an output terminal. A center frequency of a pass band of the first filter is lower than a center frequency of a pass band of the second filter, and the center frequency of the pass band of the second filter is lower than a center frequency of a pass band of the third filter. Of the first and third filters, when the filter having the center frequency of the pass band close to the center frequency of the filter is defined as a proximity filter and the other is defined as a non-proximity filter, an input terminal and an output terminal of the proximity filter are not adjacent to an input terminal and an output terminal of the second filter.

An elastic wave device includes a substrate, an elastic wave element, and an exterior resin layer. The substrate includes an outer electrode on one main surface thereof and a first mounting electrode on another main surface thereof. The elastic wave element includes a piezoelectric substrate, a transmission functional electrode, a reception functional electrode, and ground terminals on one main surface of the piezoelectric substrate, and the ground terminals are connected to the first mounting electrode. High-thermal-conductivity conductor layers are provided on another main surface of the piezoelectric substrate, conductor vias penetrate between both main surfaces of the piezoelectric substrate, and the high-thermal-conductivity conductor layers and the ground terminals are connected to each other by the conductor vias.

A high-frequency module includes a module substrate including an internal wiring pattern, and a SAW filter including a piezoelectric substrate, an electrode pattern on the piezoelectric substrate, a support surrounding the electrode pattern, and a cover on the support covering the electrode pattern to define a hollow space together with the support and the piezoelectric substrate. The module substrate, the cover, and the piezoelectric substrate are disposed in this order in a perpendicular or substantially perpendicular direction with respect to the module substrate, and a shield electrode is provided on a surface of the cover that faces the module substrate or on a surface of the cover that faces the piezoelectric substrate.

A composite filter device includes a common terminal disposed on an element substrate including a piezoelectric layer, first and second band pass filters disposed on the element substrate, and connected at one end thereof to the common terminal, a shield electrode interposed between a signal line and the first band pass filter, the signal line being disposed on the element substrate and connecting the common terminal to the first and second band pass filters, and an inductor connected between the shield electrode and a reference potential line.