Disclosed herein are structures and assemblies that may be used for thermal management in integrated circuit (IC) packages.

An RF filter comprising a resonator element and a polymer composition is provided. The polymer composition contains an aromatic polymer and has a melting temperature of about 240 C. or more. The polymer composition exhibits a dielectric constant of about 5 or less and dissipation factor of about 0.05 or less at a frequency of 10 GHz.

A wafer-level chip-scale package includes a polymeric body having a conductive via passing through the polymeric body and a piezoelectric substrate directly bonded to an upper end of the conductive via. The wafer-level chip-scale package further includes a cavity defined between a portion of the polymeric body and the piezoelectric substrate and a metal seal ring disposed in the body and having an upper end bonded to the piezoelectric substrate, the metal seal ring passing only partially through the body.

A packaging method and a packaging structure of a film bulk acoustic resonator are provided. The packaging method includes: providing a resonant cavity main structure including a first substrate and a film bulk acoustic resonant structure having a first cavity formed therebetween; forming a resonator cover by providing a second substrate and forming an elastic bonding material layer containing a second cavity; bonding the resonant cavity main structure and the resonator cover together through the elastic bonding material layer and removing elasticity of the elastic bonding material layer, where the second cavity is at least partially aligned with the first cavity; forming a through-hole penetrating through the resonator cover and exposing a corresponding electrical connection part of the film bulk acoustic resonant structure; and forming a conductive interconnection layer on a sidewall of the through-hole and on a portion of a surface of the resonator cover.

A method of manufacture for an acoustic resonator device. The method can include forming a topside metal electrode overlying a piezoelectric substrate with a piezoelectric layer and a seed substrate. A topside micro-trench can be formed within the piezoelectric layer and a topside metal can be formed overlying the topside micro-trench. This topside metal can include a topside metal plug formed within the topside micro-trench. A first backside trench can be formed underlying the topside metal electrode, and a second backside trench can be formed underlying the topside micro-trench. A backside metal electrode can be formed within the first backside trench, while a backside metal plug can be formed within the second backside trench and electrically coupled to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside trench, and the backside metal plug form a micro-via.

A BAW resonator/filter with a monolithic TFE package that defines an acoustic BC and suppresses resonances from the low-Q piezoelectric area of the resonator and resulting devices are provided. Embodiments include a BAW resonator over a dielectric layer, the BAW resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer; a first cavity in the dielectric layer under the first metal layer and a second cavity over the first cavity on the second metal layer; and a pair of TFE anchors on the second metal layer, each TFE anchor adjacent to and on an opposite side of the second cavity and extending beyond the first metal layer.

An acoustic wave device includes: first and second terminals located on a first surface of a first substrate; a third terminal that is located on the first surface and is a ground terminal; series resonators located on a second surface of the first substrate and electrically connected in series with a path between the first and second terminals; a parallel resonator that is located on the second surface and has a first end electrically connected to the path and a second end electrically connected to the third terminal; and a fourth terminal located on the first surface, at least a part of the fourth terminal overlapping with, in a thickness direction of the first substrate, at least one of one or more first series resonators of the series resonators, the one or more first series resonators having both ends to which other series resonators are electrically connected.

An electronic component includes: a substrate; a device chip, in which a functional element is located on a lower surface thereof, that is mounted on an upper surface of the substrate so that the functional element and the upper surface of the substrate are opposite to each other via an air gap; a ring-shaped metal layer that is located on the upper surface of the substrate, surrounds the device chip in a plan view, and has a protruding part located along an outer periphery thereof, an outer side surface of the ring-shaped metal layer being higher than an inner side surface thereof; a metal sealer that surrounds the device chip in the plan view, and is bonded on an upper surface of the ring-shaped metal layer; and a metal film that is located on side surfaces of the metal sealer and the ring-shaped metal layer.

A communication system using a single crystal acoustic resonator device. The device includes a piezoelectric substrate with a piezoelectric layer formed overlying a transfer substrate. A topside metal electrode is formed overlying the substrate. A topside micro-trench is formed within the piezoelectric layer. A topside metal with a topside metal plug is formed within the topside micro-trench. First and second backside cavities are formed within the transfer substrate under the topside metal electrode. A backside metal electrode is formed under the transfer substrate, within the first backside cavity, and under the topside metal electrode. A backside metal plug is formed under the transfer substrate, within the second backside cavity, and under the topside micro-trench. The backside metal plug is connected to the topside metal plug and the backside metal electrode. The topside micro-trench, the topside metal plug, the second backside cavity, and the backside metal plug form a micro-via.

A micromechanical system (MEMS) resonator includes a base substrate. A piezoelectric layer has a first electrode attached to a first surface of the piezoelectric layer and a second electrode attached to a second surface of the piezoelectric layer opposite the first electrode. The first electrode is bounded by a perimeter edge. A patterned acoustic mirror is formed on a top surface of the first electrode opposite the piezoelectric layer, such that the patterned acoustic mirror covers a border strip of the top surface of the first electrode at the perimeter edge and does not cover an active portion of the top surface of the first electrode.