A circuit arrangement and an electrical system, where in the circuit arrangement, an output terminal of a current limiting control circuit is connected to a control input of a semiconductor switch via a resistor (RG), and a gate driver is connected to the control input of the semiconductor switch via the gate resistor RG and to the resistor (R). The current limiting control circuit is configured to change its output impedance at the output terminal in order to control the semiconductor switch. A source terminal of the semiconductor switch is connected to a reference potential (GND) of the circuit arrangement, and the semiconductor switch is configured so as to set a current (I) in a circuit between an electrical power source and a load. A first inductor (L1) and a second inductor (L2) are connected in series within the circuit.

Operating a bi-directional double-base bipolar junction transistor (B-TRAN). One example is a method comprising: conducting a first load current from an upper terminal of the power module to an upper collector-emitter of the transistor, through the transistor, and from a lower collector-emitter to a lower terminal of the power module; and then responsive assertion of a first interrupt signal, interrupting the first load current from the lower collector-emitter to the lower terminal by opening a lower-main FET and thereby commutating a first shutoff current through a lower base of the transistor to the lower terminal; and blocking current from the upper terminal to the lower terminal by the transistor.

A vehicle warm-up control apparatus includes: a motor; an inverter; an electric storage device; a boost converter connected to a low-voltage-side power line and a high-voltage-side power liner; and a control unit for controlling the inverter and the boost converter, the boost converter including a first switching device as an upper arm, a second switching device as a lower arm, and a reactor. Further, the second switching device is composed of a semiconductor device variable in resistance value, and when warm-up is requested, the control unit executes warm-up control to set the resistance value of the second switching device higher than the resistance value during operation when the warm-up is not requested, and supply heat generated in the second switching device by passing current through the second switching device to a device for which the warm-up is requested.

A controller for a power converter having at least a first switch and a second switch. Each switch is a transistor with a collector terminal, an emitter terminal, and a base terminal. The controller is connectable to the base terminals of the first and second switches to provide a base current to the base terminals of the first and second switches, and connectable to the emitter terminals of the first and second switches to provide a short-circuit between the base and emitter terminals of the first and second switches. The controller also comprises a timing circuit for controlling the provision of the base current and the short-circuit in a sequence. An associated method is also provided.

A vehicle warm-up control apparatus includes: a motor; an inverter; an electric storage device; a boost converter connected to a low-voltage-side power line and a high-voltage-side power liner; and a control unit for controlling the inverter and the boost converter, the boost converter including a first switching device as an upper arm, a second switching device as a lower arm, and a reactor. Further, the second switching device is composed of a semiconductor device variable in resistance value, and when warm-up is requested, the control unit executes warm-up control to set the resistance value of the second switching device higher than the resistance value during operation when the warm-up is not requested, and supply heat generated in the second switching device by passing current through the second switching device to a device for which the warm-up is requested.

A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.

A method of dynamically adjusting a storage time of a bipolar junction transistor (BJT) in a switched mode power converter during a switching cycle includes generating a storage time reference signal responsive to an input voltage signal. A collector off signal is generated responsive to a comparison of a current sense signal to a collector off reference threshold signal. The current sense signal is representative of a switch current of the BJT. A base off reference threshold signal is generated responsive to the storage time reference signal and the collector off signal. A base off signal is generated responsive to a comparison of the current sense signal and the base off reference threshold signal. Charging of a base terminal of the BJT is discontinued responsive to the base off signal, and the base terminal of the BJT is discharged responsive to the collector off signal.

A control device for connecting between two portions of an electrical power supply line. The device includes a bipolar transistor including a wide bandgap semiconductor material and having its emitter connected to one portion of the power supply line, its collector connected to another portion of the power supply line, and the device also including control connected to the base of the transistor.

A controller adapted to operate a driver circuit of Bipolar Junction Transistors (BJT) such that within each ON-OFF switching cycle of the BJT, the output of the driver circuit is in the floating state for longer than it is in either the ON or OFF state. In the floating state the driver circuit is not drawing power and so power efficiency is improved. The circuit may include a bypass connection between the base and collector terminals of the BJT. The resistance of the bypass connection is selected to decay charge in the drift region whilst the transistor is ON to reduce the switching time of the BJT.

A control device for driving a bipolar switchable power semiconductor component is designed to apply an electrical voltage to a gate terminal of the power semiconductor component and to reduce the electrical voltage for turning off the power semiconductor component from a first voltage value to a second voltage value. The control device is designed, for turning off the power semiconductor component, firstly to reduce the electrical voltage from the first voltage value to a desaturation value and then to reduce the electrical voltage from the desaturation value to the second voltage value. The desaturation value is greater than a pinch-off voltage of the power semiconductor component.