Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented.

A semiconductor control device includes a switching element including a main element, and a sense element connected in parallel with the main element; and a control circuit configured to bias a sense electrode of the sense element by a negative voltage, and to detect a leakage current of another switching element connected in series with the main element. The control circuit biases the sense electrode by the negative voltage, for example, so as to turn on the sense element, without turning on the main element.

There is a problem in related-art semiconductor devices that the chip size of a semiconductor device having an active Miller clamp function cannot be reduced. According to one embodiment, a semiconductor device is configured to, when a power device is turned on or off, monitor a gate voltage Vg of the power device, set a predetermined range within a transition range, the transition range being a range within which the gate voltage Vg changes, change, when the gate voltage Vg is within the predetermined range, the gate voltage Vg of the power device by using a predetermined number of constant-current circuits, and change, when the gate voltage Vg is outside the predetermined range, the gate voltage Vg by using a larger number of constant-current circuits than the number of constant-current circuits that are used when the gate voltage Vg is within the predetermined range.

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.

A switching apparatus (20) comprises first and second current paths, each current path configured to be capable of conducting an electrical current, the first current path including a first switching element (28) connected in parallel with a first passive current check element (30), the switching apparatus (20) further including a switching controller configured to selectively control the switching of the first switching element (28), wherein the switching controller is configured to selectively switch the first switching element (28) at a first intra-current path switching speed to commutate the electrical current between the first switching element (30) and the first passive current check element (32), the switching controller is configured to selectively switch the first switching element (28) at a first inter-current path switching speed to commutate the electrical current between the first and second current paths, and the first intra-current path switching speed is faster or slower than the first inter-current path switching speed.

A switching circuit has a primary MOSFET switch connected between first and second terminals that are connected to a power line and a load represented as a resistance and inductance. The primary switch is operable by primary control commands to assume a conductive or non-conductive state. Four protection branches are connected in parallel with the primary switch, each having a series connected resistive element and a secondary MOSFET switch operable by branch control commands received at branch command terminals to assume a conductive or non-conductive state. A timing circuit applies branch turn off control commands in sequence to the branch command terminals, each delayed by a different predetermined time interval relative to when a primary turn off control command is applied to the primary switch.

A gate control circuit includes a first pulse generator that outputs a first pulse signal when an input signal changes from a first logical level to a second logical level, a first gate controlling portion that controls a gate voltage of a first transistor based on a first control signal when the input signal is at the second logical level, a second pulse generator that outputs a second pulse signal when the input signal changes from the second logical level to the first logical level, and a second gate controlling portion that controls the gate voltage of the first transistor based on a second control signal when the input signal is at the first logical level. The first gate controlling portion includes a first overcurrent controlling portion that controls a voltage level of the first control signal after an expiration of an output period of the first pulse signal.

The present disclosure relates to a power converter configured for limiting switching overvoltage. The power converter comprises a pair of commutation cells. Each commutation cell includes a power electronic switch and a gate driver connected to a gate of the power electronic switch. A reference of the gate driver of a first commutation cell is connected to a ground of the power converter while a reference of the gate driver of a second commutation cell is connected to a collector of the power electronic switch of the first commutation cell. The gate driver of the second commutation cell has no negative voltage power input, either through using a single voltage power supply or by connecting a negative voltage connection of the dual voltage power supply to ground.

Provided is a switch apparatus including a conductor; a switching device that contacts the conductor on a first surface and switches between a first terminal on the first surface side and a second terminal on a second surface side that is opposite to the first surface; and a control device that contacts the conductor on a third surface and includes a control circuit of the switching device provided on a fourth surface side opposite to the third surface and a first withstand voltage structure that protects the control circuit from excessive voltage added to the conductor. By providing the withstand voltage structure in the control device, it is possible to protect the control circuit.