Hybrid power switching stages and driver circuits are disclosed. An example semiconductor power switching device comprises a high-side switch and a low-side switch connected in a half-bridge configuration, wherein the high-side switch comprises a GaN power transistor and the low-side switch comprises a Si MOSFET. The Si—GaN hybrid switching stage provides enhanced performance, e.g. reduced switching losses, in a cost-effective solution which takes advantage of characteristics of power switching devices comprising both GaN power transistors and Si MOSFETs. Also disclosed is a gate driver for the Si—GaN hybrid switching stage, and a semiconductor power switching stage comprising the gate driver and a Si—GaN hybrid power switching device having a half-bridge or full-bridge switching topology.

Embodiments of systems, methods, and apparatus for improving ESD performance and switching time for semiconductor devices including metal-oxide-semiconductor (MOS) field effect transistors (FETs), and particularly to MOSFETs fabricated on Semiconductor-On-Insulator (“SOI”) and Silicon-On-Sapphire (“SOS”) substrates.

In a transistor turnoff system, a transistor control circuit is configured to adjust a control voltage at a transistor control output responsive to a comparison signal at a control input. The control voltage has a slew rate. A comparator has a comparator output and first and second comparator inputs. The first comparator input is coupled to the transistor control output. The comparator is configured to: provide the comparison signal at the comparator output based on a reference voltage at the second comparator input; and deactivate the transistor control circuit by changing a state of the comparison signal responsive to the control voltage falling below the reference voltage. A slew-rate compensator is configured to increase the reference voltage by a compensation voltage that compensates for a time delay of the comparator or the transistor control circuit. The compensation voltage is proportional to the slew rate.

A system includes a switching converter with an output inductor. The switching converter also includes a switch set with a switch node coupled to the output inductor. The switching converter also includes a first drive stage coupled to the switch set. The switching converter also includes a second drive stage coupled to the switch set. The switching converter also includes a controller coupled to the first drive stage and the second drive stage. The controller includes a supply voltage detector circuit. The controller also includes a level shifter coupled to an output of the supply voltage detector circuit. The controller also includes a selection circuit coupled between the level shifter and the second drive stage.

A drive device driving a power converter that includes a switching element formed from a wide bandgap semiconductor, includes a PWM-signal output unit that generates a drive signal that drives the switching element with PWM; an on-speed reducing unit that, when the switching element is changed from off to on, reduces a change rate of the drive signal; and an off-speed improving unit that, when the switching element is changed from on to off, draws charge from the switching element at a high speed and with a charge drawing performance higher than that at a time when the switching element is changed from off to on.

The present application provides a driving circuit of power devices, a switching circuit and a power conversion circuit. The driving circuit is configured to control switching actions of N power devices connected in parallel, where N≥2 and N is a positive integer; the driving circuit includes a driving input circuit and a common magnetic bead, where a first end of the driving input circuit is electrically connected to N first ends of the common magnetic bead, N second ends of the common magnetic bead are electrically connected to control ends of the N power devices in a one-to-one correspondence, and a second end of the driving input circuit is electrically connected to second ends of the N power devices.

A power conversion circuit is mounted in a vehicle and controls an output torque of the rotating machine based on a requested command torque. A driving apparatus of a switching element controls a current flowing to the rotating machine. The driving apparatus sets at least one of a turn-on speed and a turn-off speed for the switching element to a plurality of switching speeds that are discretely determined, based on a parameter that is correlated with the output torque and has a controllable value. The driving apparatus turns on or off the switching element at the switching speeds. The switching speeds are allocated to the respective magnitudes of the parameter at uneven intervals, and determined such that the number of allocated switching speeds is greater in a range in which an occurrence frequency of the parameter is high, compared to a range in which the occurrence frequency is low.

A circuit for turning off a power semiconductor switch includes a turn-off transistor coupled to switch a signal for turning off the power semiconductor switch onto a control terminal of the power semiconductor switch and a feedback control loop for controlling a voltage on the control terminal of the power semiconductor switch during turn-off. The feedback loop includes a feedback path to feedback a measurement of the voltage of the control terminal of the power semiconductor switch, a control terminal reference voltage generator to generate a time-dependent reference voltage, an error amplifier to generate an error signal representative of a difference between the voltage of the control terminal and the time-dependent reference voltage, and a forward path to convey the error signal forward for controlling the switching of the signal for turning off the power semiconductor switch onto the control terminal of the power semiconductor switch by the turn-off transistor.

We describe a system for controlling very large numbers of power semiconductor switching devices (132) to switch in synchronization. The devices are high power devices, for example carrying hundreds of amps and/or voltages of the order of kilovolts. In outline the system comprises a coordinating control system (110, 120), which communicates with a plurality of switching device controllers (130) to control the devices into a plurality of states including a fully-off state, a saturated-on state, and at least one intermediate state between the fully-off and saturated-on states, synchronizing the devices in the at least one intermediate state during switching.

A control circuit for turning on a power semiconductor switch comprises an input which is configured to receive a signal that characterizes the switch-on behavior of the power semiconductor switch, a variable current source which is configured to supply a current with a variable level to a control input of the power semiconductor switch in order to switch on the power semiconductor switch, wherein the control circuit is configured to control the variable current source in a closed control loop in response to the signal that characterizes the switch-on behavior of the power semiconductor switch.