Patent classifications
H03K19/01721
Memory with high-accuracy reference-free multi-inverter sense circuit and associated sensing method
Disclosed is a memory structure with reference-free single-ended sensing. The structure includes an array of non-volatile memory (NVM) cells (e.g., resistance programmable NVM cells) and a sense circuit connected to the array via a data line and a column decoder. The sense circuit includes field effect transistors (FETs) connected in parallel between an output node and a switch and inverters connected between the data line and the gates of the FETs, respectively. To determine the logic value of a stored bit, the inverters are used to detect whether or not a voltage drop occurs on the data line within a predetermined period of time. Using redundant inverters to control redundant FETs connected to the output node increases the likelihood that the occurrence of the voltage drop will be detected and captured at the output node, even in the presence of process and/or thermal variations. Also disclosed is a sensing method.
Off chip driving system and signal compensation method
An off chip driving system includes a decision circuit, multiple first and second adjustable-enhancement circuits, and multiple first and second drivers. The decision circuit outputs a first and a second decision signal according to a clock and an input data. Each first adjustable-enhancement circuit generates one of first control signals in response to the first and the second decision signal and one of first optional signals. Each second adjustable-enhancement circuit generates one of second control signals in response to the first and the second decision signal and one of second optional signals. Each first driver is coupled to the corresponding first adjustable-enhancement circuit and configured to be enabled in response to the corresponding first control signal. Each second driver is coupled to the corresponding second adjustable-enhancement circuit and configured to be enabled in response to the corresponding second control signal.
BUFFER CIRCUITS AND SEMICONDUCTOR STRUCTURES THEREOF
A buffer circuit is provided to output an output signal at an output node. The buffer circuit includes first and second inverters and first and second switches. The first inverter inverts an input signal. The second inverter is coupled between the first inverter and the output node. The first switch is coupled between a first voltage source terminal and the output node. The second switch is coupled between the output node and a second voltage source terminal. First and second voltages are respectively provided to the first and second voltage source terminals. In response to the input signal switching to a first level from a second level, the first switch is turned on to pre-charge the output node. In response to the input signal transiting to the second level from the first level, the second switch is turned on to pre-discharge the output node.
Devices and methods for preventing errors and detecting faults within a memory device
A data processing system includes a memory configured to receive memory access requests. Each memory access request having a corresponding access address and having a corresponding parity bit for an address value of the corresponding access address. The corresponding access address is received over a plurality of address lines and the parity bit is received over a parity line. The memory includes a memory array having a plurality of memory cells arranged in rows, each row having a corresponding word line of a plurality of word lines, and a row decoder coupled to the plurality of address lines, the parity line, and the plurality of word lines. The row decoder is configured to selectively activate a selected word line of the plurality of word lines based on the corresponding access address and the corresponding parity bit of a received memory access request. The concept can also be used with parity bits on columns of the memory cells and a column decoder that selects bit lines associated with column address lines.
Wide voltage range level shifter with reduced duty cycle distortion across operating conditions
According to certain aspects, a level shifter includes a first branch including a first pull-up transistor configured to pull up a first node, and a first pull-down transistor configured to pull down the first node. The level shifter also includes a second branch including a second pull-up transistor configured to pull up a second node, and a second pull-down transistor configured to pull down the second node. The level shifter further includes a third branch including a third pull-up transistor configured to pull up a third node, and a third pull-down transistor configured to pull down the third node. The first branch is cross coupled with the third branch, the second branch is cross coupled with the third branch, the first pull-down transistor has a first channel width, the second pull-down transistor has a second channel width, and the first channel width is greater than the second channel width.
Driving circuit
A driving circuit includes: a primary driver configured to receive a first signal and generate a second signal based on the first signal, driving capability of the second signal being greater than that of the first signal; and an auxiliary driver connected to an output terminal of the primary driver and configured to receive the first signal and generate an auxiliary driving signal based on the first signal, the auxiliary driving signal being configured to shorten a rise time of the second signal.
BUILT-IN SELF-TEST CIRCUIT AND TEMPERATURE MEASUREMENT CIRCUIT INCLUDING THE SAME
A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.
OFF-CHIP DRIVING DEVICE
The off-chip driving (OCD) device includes a signal transition detector, a front-end driver, a first main driver, a second main driver, a first resistance provider and a second resistance provider. The signal transition detector is used to detect a transition status of an input signal to generate decision information. The front-end driver generates control signals according to the decision information, and generates driving signals according to the input signal. The first main driver and the second main driver generate an output signal to a pad according to the driving signals. The first resistance provider adjusts a first resistance between the first main driver and the pad according to a first control signal. The second resistance provider adjusts a second resistance between the second main driver and the pad according to a second control signal.
CONFIGURATION CONTROL CIRCUIT OF FLASH-TYPE FIELD PROGRAMMABLE GATE ARRAY (FPGA) CAPABLE OF SUPPRESSING PROGRAMMING INTERFERENCE
A configuration control circuit of a flash-type FPGA capable of suppressing programming interference is provided. The configuration control circuit adds a programming selection circuit compared with a conventional configuration control circuit. When a programming operation is performed on a flash memory cell located in a target row and a target column, the programming selection circuit controls a path between a programming bit line (BL) voltage and a BL voltage obtaining terminal of the flash memory cell located in the target row and the target column to be turned on, and a path between the programming BL voltage and a BL voltage obtaining terminal of a flash memory cell located in another row and the target column to be turned off.
OUTPUT DRIVING CIRCUIT AND MEMORY
The present application provides an output driving circuit and a memory. The output driving circuit includes: a signal input terminal inputting a positive input signal and a negative input signal complementary to each other; a pull-up output unit and a pull-down output unit connected to the signal input terminal, the positive input signal acting as an input signal of the pull-up output unit, and the negative input signal acting as an input signal of the pull-down output unit; at least one compensation unit connected in parallel with the pull-up or pull-down output unit; at least one pulse signal generation circuit, and generating a pulse signal, the pulse signal acting as a control signal of the compensation unit; and a signal output terminal connected to an output terminal of the pull-up output unit, an output terminal of the pull-down output unit and an output terminal of the compensation unit.