The present disclosure relates to a molybdenum silicide based composition comprising aluminum oxide (Al.sub.2O.sub.3) and to the use thereof in high temperature applications.

A carbon heating element and a method for manufacturing a carbon heating element are provided. The carbon heating element may efficiently dissipate heat and prevent disconnection or destruction of a heating element to prolong a lifespan thereof without generating a spark and plasma under a high voltage. The carbon heating element may include carbon (C) and silicon carbide (SiC), and the carbon heating element may have a thermal conductivity of 1.6 W/m.Math.K or more.

A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector.

A method of healing a plurality of non-volatile semiconductor memory devices on a multi-chip package is disclosed. The multi-chip package can be heated to a temperature range having a temperature range upper limit value and a temperature range lower limit value. The temperature of the multi-chip package can be kept essentially within the temperature range for a predetermined time period by monitoring a thermal sensing element with a sensing circuit outside of the multi-chip package. The thermal sensing element may be located near the components with the lowest failure temperature to ensure the multi-chip package is not damaged during the healing process.

A carbon composite composition and a carbon heater are provided. The carbon composite composition may include a phenolic resin as a binder, a lubricant, and a base material that determines a specific resistance of a resistance heating element at a high temperature. The carbon composite composition may prevent a dielectric breakdown, a spark and plasma from occurring in a carbon heater, and may improve radiation efficiency of the carbon heater.

A silicon carbide heating element is provided having one or more hot zones and two or more cold ends in which: the cross-sectional areas of the two or more cold ends are substantially the same or less than the cross-sectional areas of the one or more hot zones; and part at least of at least one cold end comprises a body of recrystallized silicon carbide material coated with a conductive coating having an electrical resistivity lower than that of the recrystallized silicon carbide material.

This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.

A resistance heating element contains a heat-resistant resin and conductive stainless steel fiber coated with a film, and satisfies the following expression (1): 1(r1/r0)1.03, where r0 represents the initial resistance value of the resistance heating element, and r1 represents the resistance value of the resistance heating element after allowed to stand at 30 C. and a relative humidity of 80% for one week.

The invention relates to a method for producing a molded body, having a silicon carbide support matrix and an integral carbon structure, wherein a base body on the basis of a powder mixture containing silicon carbide or silicon and carbon and of a binder is built in layers in a generative method, and wherein a pyrolysis of the base body is effected for realizing the molded body after the binder has been cured, wherein the carbon content of the carbon structure is adjusted by way of the pyrolysis of the binder and by way of the carbon content of the powder mixture or infiltration of a carbon material into the silicon carbide support matrix.

A method of healing a plurality of non-volatile semiconductor memory devices on a multi-chip package is disclosed. The multi-chip package can be heated to a temperature range having a temperature range upper limit value and a temperature range lower limit value. The temperature of the multi-chip package can be kept essentially within the temperature range for a predetermined time period by monitoring a thermal sensing element with a sensing circuit outside of the multi-chip package. The thermal sensing element may be located near the components with the lowest failure temperature to ensure the multi-chip package is not damaged during the healing process.