A sterilization system having a controllable non-ionizing microwave radiation source for providing microwave energy for combining with a gas to produce atmospheric low temperature plasma for sterilizing biological tissue surfaces or the like. A plasma generating region may be contained in a hand held plasma applicator. The system may include an impedance adjustor e.g. integrated in the plasma applicator arranged to set a plasma strike condition and plasma sustain condition. The gas and microwave energy may be transported to a plasma generating region along an integrated cable assembly. The Integrated cable assembly may provide a two way gas flow arrangement to permit residual gas to be removed from the surface. Invasive surface plasma treatment is therefore possible. The plasma applicator may have multiple plasma emitters to produce a line or blanket of plasma.

A plasma processing apparatus includes: a high voltage power supply for supplying a high voltage power to a magnetron; and a detector for detecting a microwave output from the magnetron, wherein based on a result of comparing a signal, which is obtained by adding an output from the detector to an AC component of a current detected from an output of the high voltage power supply, with a setting value of the output of the high voltage power supply, the output of the high voltage power supply is adjusted.

Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. Such systems and methods find use for the commercial-scale generation of neutrons and protons for a wide variety of research, medical, security, and industrial processes.

A plasma treatment apparatus which performs uniform plasma treatment on a liquid. A plasma treatment apparatus includes a coaxial waveguide having an inner conductor, a first outer conductor, and a second outer conductor; a microwave generation unit; an outside tube which is located on the outer side of the first outer conductor and the second outer conductor and which in cooperation with the first outer conductor and the second outer conductor forms a flow path through which a liquid flows; and a plasma generation region. A first protrusion of the first outer conductor and a second protrusion of the second outer conductor face each other in a non-contacting state. The plasma generation region is a region extending along a facing location where the first protrusion of the first outer conductor and the second protrusion of the second outer conductor face each other.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. Such systems and methods find use for the commercial-scale generation of neutrons and protons for a wide variety of research, medical, security, and industrial processes.

Provided herein are high energy ion beam generator systems and methods that provide low cost, high performance, robust, consistent, uniform, low gas consumption and high current/high-moderate voltage generation of neutrons and protons. Such systems and methods find use for the commercial-scale generation of neutrons and protons for a wide variety of research, medical, security, and industrial processes.

A coaxial energy delivery system comprised of a radio frequency power supply as the preferred source of power, electron accelerator system, and electrically conductive tube to be fitted to permit the flow of a gas intended to be energized as a plasma, a point of discharge of the said gas, whether in tubular or columnar form, coincident with the point of emission of the electromagnetic wave, the emission of said electromagnetic wave at said point, utilization of a fraction of the potential energy at that point to form a plasma in such gas flow which plasma forms a conduit or waveguide to insulate and confine the electromagnetic wave in its interior, which is manifested as a visible beam in appearance and thereby directing such coherent electromagnetic wave to a target material to be coupled with such material and impart its energy thereto.

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

A microwave plasma treatment device includes a resonator including a container; a single microwave oscillation source that outputs a reference microwave; a waveguide that connects the microwave oscillation source and the resonator to each other; and a phase control mechanism that generates a modified microwave having a phase different from a phase of the reference microwave by controlling the phase of the reference microwave. The resonator includes one or more first-type introducing portions for introducing the reference microwave into the resonator and one or more second-type introducing portions for introducing the modified microwave into the resonator, and the microwave plasma treatment device is configured such that at least one of a position, a size, and a shape of a plasma ball generated in the container is changed by superimposing the modified microwave on the reference microwave in the resonator.