A method of fabricating a slanted surface-relief structure in a material layer using a chemically assisted reactive ion beam etching (CARIBE) system includes generating, by a reactive ion source generator of the CARIBE system using a first reactive gas, a plasma including reactive ions of the first reactive gas that are configured to react with the material layer to generate volatile materials; extracting and accelerating, by one or more grids of the CARIBE system, at least some of the reactive ions in the plasma to form a reactive ion beam towards the material layer; and injecting, by a gas ring of the CARIBE system, a second reactive gas onto the material layer, the second reactive gas configured to react with the material layer. The reactive ion beam and the second reactive gas etch the material layer both physically and chemically to form the slanted surface-relief structure in the material layer.

A method includes causing manufacturing equipment to generate a RF signal to energize a processing chamber associated with the manufacturing equipment. The method further includes receiving, from one or more sensors associated with the manufacturing equipment, current trace data associated with the RF signal. The method further includes updating impedance values of a digital replica associated with the manufacturing equipment based on the current trace data. The method further includes obtaining, from the digital replica, one or more outputs indicative of predictive data. The method further includes causing, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment.

Example systems have a defrost system that can receive a first RF signal at a first frequency to defrost a load. An air treatment device can receive a second RF signal at a second frequency and perform an air treatment process. An RF signal source has a power output, and a switching arrangement selectively electrically connects the defrost system and the first air treatment device to the power output of the RF signal source. A controller can electrically connect one of the defrost system and the first air treatment device to the power output of the RF signal source. When the defrost system is electrically connected, the RF signal source outputs the first RF signal at the first frequency, and when the first air treatment device is electrically connected, the RF signal source outputs the second RF signal at the second frequency.

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

An antenna unit for inductively coupled plasma includes an antenna configured to generate an inductively coupled plasma used in processing a substrate within a processing chamber of a plasma processing apparatus, wherein the antenna includes planar sections which are formed to face the substrate and generate an induction electric field that contributes to generate the inductively coupled plasma, wherein a plurality of antenna segments having planar portions which form a portion of the planar sections are arranged to constitute the planar sections, wherein the antenna segments are constituted by winding an antenna line in a direction intersecting with the substrate in a longitudinal and spiral pattern.

A micro-cathode arc propulsion system. By replacing an inductive circuit in a traditional micro-cathode arc propulsion system with a capacitor circuit, the stability of the operation of a micro-cathode arc thruster can be improved due to the stable discharging mode of the capacitor, and as the internal resistance of the capacitor is small during operation, the additional power consumption of the circuit is reduced, and the efficiency of the system is improved. In addition, as a pulse power supply is used to power in a pulse manner, the average power inputted into the micro-cathode arc thruster is greatly reduced.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

The invention provides an electrothermal RF plasma production system and thruster design, and associated components, that may be used in terrestrial applications and/or miniaturized to the mass, volume, and power budget of Cube Satellites (CubeSats) to meet the propulsion needs of the small satellite (˜5 to ˜500 kg) constellations and larger satellite buses.

A plasma processing apparatus may include a mechanism for generating a plasma, a processing platform for supporting a substrate to be processed, and a voltage waveform generator having an output electrically coupled to the processing platform. The voltage waveform generator includes a plurality of first buck converters arranged in parallel and coupled to the output. The first buck converters include actively switchable semiconductor switches. A control unit is configured to operate the actively switchable semiconductor switches through pulse width modulation signals, and the control unit is configured to operate the plurality of first buck converters in an interleaved manner.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.