A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

Disclosed is an HF plasma generator for generating an inductively coupled plasma in spectrometry, comprising a voltage supply device with a DC voltage source, an oscillator circuit connected to the power supply device for generating HF power, and a load circuit coupled to the oscillator circuit for generating the plasma, said load circuit having at least one induction coil and one capacitor connected in parallel. The HF plasma generator comprises at least one controllable voltage source arranged in a branch of the oscillator circuit. The controllable voltage source is designed to set a voltage applied to the load circuit and/or at least one potential difference between the induction coil and a spectrometer, in particular a cone of the spectrometer. Further disclosed is a spectrometer having an HF plasma generator.

A method includes causing manufacturing equipment to generate a RF signal to energize a processing chamber associated with the manufacturing equipment. The method further includes receiving, from one or more sensors associated with the manufacturing equipment, current trace data associated with the RF signal. The method further includes updating impedance values of a digital replica associated with the manufacturing equipment based on the current trace data. The method further includes obtaining, from the digital replica, one or more outputs indicative of predictive data. The method further includes causing, based on the predictive data, performance of one or more corrective actions associated with the manufacturing equipment.

A power supply includes an inverter configured to convert direct current (DC) power into alternating current (AC) power, an impedance matching circuit configured to supply the AC power to a load, and a controller configured to detect a delay time of an output voltage and an output current output to the impedance matching circuit and the load and to adjust a frequency of the output voltage according to the detected delay time.

A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

The present disclosure provides a plasma reactor having a function of tuning low frequency RF power distribution, comprising: a reaction chamber in which an electrically conductive base is provided, the electrically conductive base being connected to a low frequency RF source via a first match, an electrostatic chuck being provided on the electrically conductive base, an upper surface of the electrostatic chuck being configured for fixing a to-be-processed substrate, an outer sidewall of the electrically conductive base being coated with at least one layer of plasma corrosion-resistance dielectric layer, a coupling ring made of a dielectric material surrounding an outer perimeter of the base, a focus ring being disposed above the coupling ring, the focus ring being arranged surround the electrostatic chuck and be exposed to a plasma during a plasma processing procedure; the plasma reactor further comprising an annular electrode that is disposed above the coupling ring but below the focus ring; a wire, a first end of which is electrically connected to the base, and a second end of which is connected to the annular electrode, a variable capacitance being serially connected to the wire.

A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

The present invention comprises: a high-frequency power supply; an antenna group having a plurality of antennas connected to the high-frequency power supply; a plurality of reactance variable elements connected to the feeding sides and the grounding sides of the plurality of antennas; a current detection mechanism which detects the current flowing through the feeding sides and the ground sides of the plurality of antennas; a uniformity calculation unit which calculates the uniformity index value of the current flowing through the plurality of antennas, on the basis of the current value detected by the current detection mechanism; and a reactance changing unit which sequentially changes the reactance of the plurality of reactance variable elements such that the uniformity index value calculated by the uniformity calculation unit approaches a predetermined set value.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.