A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

A plasma control system comprises: a high frequency power source; a first antenna connected at one end to the high frequency power source; a second antenna connected at one end to another end of the first antenna; a first variable reactance element provided between the first antenna and the second antenna; a first drive part for the first variable reactance element; a second variable reactance element connected to another end of the second antenna; a second drive part for the second variable reactance element; a first current detection part detecting the current in the one end of the first antenna; a second current detection part detecting the current between the first antenna and the second antenna; a third current detection part detecting the current in the other end of the second antenna; and a control device controlling the first drive part and the second drive part.

Certain configurations are described herein of an instrument comprising a passive cooling device which includes, in part, a loop thermosyphon configured to thermally couple to a component of the instrument to be cooled. In some instances, the cooling device can cool a transistor, transistor pair, an interface or other components of the instrument.

The invention provides a plasma production and control device that may be used in propulsion (e.g., satellite propulsion) and/or industrial applications. The plasma production system comprises a unidirectional magnetic field.

An exhaust pipe device according to an embodiment includes a pipe body, a coil, an inner pipe, and a plasma generation circuit. The coil is disposed inside the pipe body. The inner pipe is a dielectric and is disposed inside the coil. The plasma generation circuit is configured to generate plasma inside the inner pipe using the coil. The exhaust pipe device functions as a part of an exhaust pipe disposed between a film forming chamber and a vacuum pump for exhausting an inside of the film forming chamber.

A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

A system, device and method are provided for exposing a patient to therapeutic resonant frequency patterns (RFP) for therapy and treatment of a patient, for example, biological tissue such as muscle, tendon, ligament, and nerve tissue. The resonance frequencies originate from many bioactive substances, pharmaceuticals or other compounds, and key frequencies of the RFP of a compound can be replicated and then delivered to a patient using an electromagnetic catalyst to provide therapeutic benefits. RFPs can be imprinted in a separate device using a plasma imprinting device and method. This separate device can be actively excited by a delivery mechanism that uses electromagnetic or mechanical waves to interact with the device. The actively excited device transmits the RFPs or therapeutic resonant frequency patterns to the patient for similar enhancements and therapeutic benefits.

The present invention is characterized in that an autonomous bubble generating plasma unit for water treatment comprises a first reactor and a second reactor. The first reactor comprises: a first reacting water duct in which a secondary coil is wound around a duct body having a predetermined length, wherein a static mixer is provided in the duct body; an insulating duct body of a predetermined length installed on the outside of the first reacting water duct excluding a region in which a resonance generating part provided on the outside of the secondary coil wound on the first reacting water duct; and the resonance generating part in which a primary coil is wound on a primary coil bobbin installed at a predetermined gap from the outside of the secondary coil located in a water introducing part of the first reacting water duct, and the number of windings of the primary coil wound on the primary coil bobbin is adjusted to be a resonance point by a winding number adjusting bobbin, wherein a motor drive is installed to rotate the winding number adjusting bobbin forward and in reverse, and thus the winding number adjusting bobbin is controlled by resonance information applied to the secondary coil from a resonance sensor. The second reactor comprises: a second reacting water duct connected to the first reacting water duct to receive a supply of treated water treated in the first reacting water duct, and provided as an insulating duct of a predetermined length; an internal electrode installed in the second reacting water duct and formed as a Kenics mixer-type structure; and an external electrode installed so as to not be conductive with the internal electrode and having a cylindrical mesh-type duct body.