Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

An inductively coupled plasma source with a simple configuration, has an antenna cooling mechanism capable of reducing costs required for such devices. The plasma source is configured to generate plasma in a vacuum vessel, and includes a frame (antenna fixing frame) provided in a wall of the vacuum vessel and a surface antenna fixed in the frame. Periphery of the antenna is surrounded by the frame, so that heat generated in the antenna flows from the periphery to the frame and further flows from the frame to the vacuum vessel. Thus, the antenna is efficiently cooled. Therefore, a liquid or gas refrigerant is unnecessary, and thus the configuration can be simplified. Furthermore, a temperature control device and a circulation device are unnecessary, so that the cost required for the devices is reduced.

Certain embodiments described herein are directed to a torch that includes a lanthanide or actinide material. In some embodiments, the torch can include one or more other materials in combination with the lanthanide or actinide material. In some embodiments, the torch can comprise cerium, terbium or thorium. In other embodiments, the torch can comprise a lanthanide or actinide material comprising a melting point higher than the melting point of quartz.

An inductively-coupled plasma (ICP) generation system may include a dielectric tube, a first inductive coil structure to enclose the dielectric tube, an RF power supply, a first main capacitor between a positive output terminal of the RF power supply and one end of the first inductive coil structure, and a second main capacitor between a negative output terminal of the RF power supply and an opposite end of the first inductive coil structure. The first inductive coil structure may include inductive coils connected in series to each other and placed at different layers, the inductive coils having at least one turn at each layer, and auxiliary capacitors, which are respectively provided between adjacent ones of the inductive coils to distribute a voltage applied to the inductive coils.

A modified deposit-and-etch Bosch process of cyclic anisotropic etching and film deposition by gas switching. The modification of which includes depositing nucleated silicon layers as liquefied droplets of silicon instead of by passivation, and using a bias discharge to decelerate an otherwise ballistic deposition instead into a nuclei-generation cloud at the deposition site. Such is then useful in the refurbishment of gas distribution plates made of silicon.

A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.

Provided are a method and apparatus capable of producing fine particles with favorable particle size distribution. In a production method in which feedstock for fine particle production is supplied intermittently into a modulated induction thermal plasma flame, the feedstock is vaporized to form a gas phase mixture, and the mixture is cooled to produce the fine particles: a modulated induction thermal plasma flame in which the temperature state is time-modulated is generated; the modulated induction thermal plasma flame is switched between a high temperature state and a low temperature state; and when the modulated induction thermal plasma flame is in the high temperature state, the feedstock is supplied together with a carrier gas, and when the modulated induction thermal plasma flame is in the low temperature state, supply of the feedstock is suspended and a gas of the same type as the carrier gas is supplied.

The impedance of an antenna is reduced and gaps generated between electrodes constituting a capacitance element and a dielectric body are eliminated. An antenna (3) for generating inductively coupled plasma P includes at least two conductor elements (31), an insulation element (32) that is arranged between the mutually adjacent conductor elements (31) and insulates the conductor elements (31), and a capacitance element (33) that is connected electrically to and in series with the mutually adjacent conductor elements (31). The capacitance element (33) is configured from a first electrode (33A) electrically connected to one of the mutually adjacent conductor elements (21), a second electrode (33B) electrically connected to the other of the mutually adjacent conductor elements (21), and a liquid dielectric body filling the space between the first electrode (33A) and the second electrode (33B).

An ion source chamber with an embedded heater is disclosed. The heater comprises a radiant heater, such as a heat lamp or light emitting diodes, and is disposed within the ion source chamber. The radiant heat from the heater warms the interior surfaces of the ion source chamber. Further, the ion source chamber is designed such that the plasma is generated in a portion of the ion source chamber that does not contain the heater. Additionally, a controller may be in communication with the heater so as to maintain the ion source chamber at a desired temperature when a plasma is not being generated in the ion source chamber.