A method of manufacturing a component for a stretchable electronic device comprises providing a silicon wafer comprising a first surface and a second surface; applying a layer of a conductive metal onto at least a portion of the first surface of the silicon wafer; providing a stretchable silicone substrate having a first surface and a second surface; and plasma bonding at least a portion of the second surface of the silicon wafer to at least a portion of the first surface of the stretchable silicone substrate.

According to embodiments of the present invention, an ink composition is provided. The ink composition includes a plurality of nanostructures distributed in at least two cross-sectional dimension ranges, wherein each nanostructure of the plurality of nanostructures is free of a cross-sectional dimension of more than 200 nm. According to further embodiments of the present invention, a method for forming a conductive member and a conductive device are also provided.

An electroconductive substrate including a base material and a metal wiring made of at least either of silver and copper, and the electroconductive substrate has an antireflection region formed on part or all of the metal wiring surface. This antireflection region is composed of roughened particles made of at least either of silver and copper and blackened particles finer than the roughened particles and embedded between the roughened particles. The blackened particles are made of silver or a silver compound, copper or a copper compound, or carbon or an organic substance having a carbon content of 25 wt % or more. The antireflection region has a surface with a center line average roughness of 15 nm or more and 70 nm or less. The electroconductive substrate is formed from metal wiring from a metal ink that forms roughened particles, followed by application of a blackening ink containing blackened particles.

Provided is a copper powder manufactured by means of a wet method, wherein the absolute value of the zeta potential of the copper powder is at least 20 mV. The copper powder can be manufactured so as to reduce the burden of the steps of crushing a dry cake and classification, and there is a sufficient reduction in residual secondary particles.

Implementations of the disclosure are directed to a lead-free mixed solder powder paste suitable for low temperature to middle temperature soldering applications. The lead-free solder paste may consist of: an amount of a first solder alloy powder between 44 wt % and 83 wt %, the first solder alloy powder comprising Sn; an amount of a second solder alloy powder between 5 wt % to 44 wt %, the second alloy powder comprising Sn, where the first solder alloy powder has a liquidus temperature lower than a solidus temperature of the second solder alloy powder; and a remainder of flux. The solder paste may be used for reflow at a peak temperature below the solidus temperature of the higher solidus temperature solder powder but above the melting temperature of the lower solidus temperature one.

An object of the present disclosure is to provide a paste that can suppress fluctuations in viscosity at a printing temperature to perform printing without unevenness, and is sintered fast even in an inert gas atmosphere such as nitrogen to form a highly accurate conductive wiring and a joined structure excellent in joining strength. The present disclosure provides an adhesive conductive paste for forming a conductive wiring and/or a joined structure to connect electronic elements, the adhesive conductive paste including a conductive particle and a solvent. The adhesive conductive paste contains, as the conductive particle, a silver particle (A) having an average particle size of 1 nm or greater and less than 100 nm and a silver particle (B) having an average particle size of 0.1 μm or greater and 10 μm or less, the silver particle (A) being a silver nanoparticle having a configuration in which a surface is coated with a protective agent containing amine, and the adhesive conductive paste contains, as the solvent, a compound (C) represented by Formula (I) below:

R.sup.a—O—(X—O).sub.n—R.sup.b  (I) where in Formula (I), R.sup.a represents a monovalent group selected from a hydrocarbon group having from 1 to 6 carbon atom(s) and an acyl group, X represents a divalent group selected from a hydrocarbon group having from 2 to 6 carbon atoms, R.sup.b represents a hydrogen atom or a monovalent group selected from a hydrocarbon group having from 1 to 6 carbon atom(s) and an acyl group, R.sup.a and R.sup.b may be the same, n represents an integer from 1 to 3.

Conductive thick film compositions compatible to aluminum nitride, alumina and silicon nitride substrates for microelectronic circuit application. The conductive thick film composition includes first copper powder, second copper powder, and glass component. The conductive thick film composition further includes CU.sub.2O, Ag, and at least one metal element selected from Ti, V, Zr, Mn, Cr, Co, and Sn. After firing, the conductive thick film composition exhibit improved sheet resistivity, and improved adhesion with underlying substrate.

According to embodiments of the present invention, an ink composition is provided. The ink composition includes a plurality of nanostructures distributed in at least two cross-sectional dimension ranges, wherein each nanostructure of the plurality of nanostructures is free of a cross-sectional dimension of more than 200 nm. According to further embodiments of the present invention, a method for forming a conductive member and a conductive device are also provided.

Pastes are disclosed that are configured to coat a passage of a substrate. When the paste is sintered, the paste becomes electrically conductive so as to transmit electrical signals from a first end of the passage to ta second end of the passage that is opposite the first end of the passage. The metallized paste contains a lead-free glass frit, and has a coefficient of thermal expansion sufficiently matched to the substrate so as to avoid cracking of the sintered paste, the substrate, or both, during sintering.

Implementations of the disclosure are directed to a lead-free mixed solder powder paste suitable for low temperature to middle temperature soldering applications. The lead-free solder paste may consist of: an amount of a first solder alloy powder between 44 wt % and 83 wt %, the first solder alloy powder comprising Sn; an amount of a second solder alloy powder between 5 wt % to 44 wt %, the second alloy powder comprising Sn, where the first solder alloy powder has a liquidus temperature lower than a solidus temperature of the second solder alloy powder; and a remainder of flux. The solder paste may be used for reflow at a peak temperature below the solidus temperature of the higher solidus temperature solder powder but above the melting temperature of the lower solidus temperature one.