A thin film transistor array includes thin film transistors positioned in a matrix, each of the thin film transistors including a substrate, a gate electrode formed on the substrate, a gate insulation layer formed on the gate electrode, a source electrode formed on the gate insulation layer, a drain electrode formed on the gate insulation layer, a pixel electrode formed on the gate insulation layer and connected to the source electrode and the drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film covering the source electrode, the drain electrode, the semiconductor layer and a portion of the pixel electrode, and an upper pixel electrode formed on the interlayer insulation film and connected to the pixel electrode. The interlayer insulation film has one or more concave portions and one or more via hole portions.

A heterostructure comprising at least one carbon nanomembrane on top of at least one carbon layer, a method of manufacture of the heterostructure, and an electronic device, a sensor and a diagnostic device comprising the heterostructure. The heterostructure comprises at least one carbon nanomembrane on top of at least one carbon layer, wherein the at least one carbon nanomembrane has a thickness of 0.5 to 5 nm and the heterostructure has a thickness of 1 to 10 nm.

Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

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To provide an inspection device and an inspection method which are capable of detecting a disconnection defect in an organic TFT array and/or evaluating a variation in the output properties and response speed of each organic TFT element. There are provided a device and a method of optically measuring the presence or absence of the accumulation of carriers in an organic semiconductor thin film which provides a channel layer of an organic TFT element. A source and a drain in each organic TFT are short-circuited to each other, a voltage is turned on and turned off in a predetermined period between this and a gate, and images before and after application of the voltage are captured in synchronization with the predetermined period while radiating monochromatic light, to obtain a differential image.

Provided are devices and methods to detect the presence of volatile organic compounds related to the presence of a disease state in a biological sample. The devices may include a detection moiety such as a polynucleotide in electronic communication with a semiconductor such as graphene or a carbon nanotube.

An object of the invention is to provide an organic semiconductor element having high mobility and excellent temporal stability under high humidity, and a manufacturing method thereof. Another object is to provide a novel compound suitable for an organic semiconductor. Still another object is to provide an organic semiconductor film having high mobility and excellent temporal stability under high humidity and a composition for forming an organic semiconductor film that can suitably form the organic semiconductor film.

The organic semiconductor element according to the invention includes an organic semiconductor layer containing an organic semiconductor having a repeating unit represented by Formula 1.

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An object to be achieved by the present invention is to provide an organic semiconductor element and an organic semiconductor film having high mobility and excellent heat resistance, and a manufacturing method thereof, to provide a novel compound that is suitable as an organic semiconductor, and to provide a composition for forming an organic semiconductor film in which coating film formability is excellent, with which an organic semiconductor element that has high mobility can be obtained, and in which heat resistance is excellent, an organic semiconductor element in which the composition for forming an organic semiconductor film is used, and a manufacturing method thereof.

The organic semiconductor element according to the present invention includes a compound represented by Formula 1 below included in an organic semiconductor layer.

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A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB.sub.(1-u)C.sub.(u)[X.sub.(1-v)Y.sub.(v)].sub.3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn.sup.2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

An organic thin film transistor, a manufacturing method thereof and an array substrate are provided. The manufacturing method of an organic thin film transistor includes: forming an organic semiconductor layer; partially sheltering the organic semiconductor layer, so that a sheltered region and an unsheltered region are formed on the organic semiconductor layer, the sheltered region corresponding to a region where an active layer of the organic thin film transistor needs to be formed; and doping the organic semiconductor layer, so that the organic semiconductor layer in correspondence with the sheltered region is not doped, and the organic semiconductor layer in correspondence with the unsheltered region is doped.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.