A method includes providing a film of a high-temperature superconductor compound on a flexible substrate, where a portion of the film has a first oxygen state, and exposing a portion of the film to a focused ion beam to create a structure within the film. The structure may result from the portion of the film being partially or completely removed. The structure may be a trench along the length or width of the film. The method may include annealing the exposed portion of the film to a second oxygen state. The oxygen content of the second oxygen state may be greater or less than the oxygen content of the first oxygen state.

Proposed are a thin film having single crystallinity and an excellent crystal orientation property, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity. The technical gist of the present disclosure includes a thin film having single crystallinity, which is formed by depositing a polycrystalline second material on an upper portion of a substrate including a polycrystalline first material and which has a crystal orientation property satisfying the following Relational Expression 1 at a grain boundary, a method of manufacturing the same, and a semiconductor device, a battery device, a superconducting wire, and a superconducting article including the thin film having single crystallinity.

0°<FWHM.sub.2≤3°  [Relational Expression 1] (FWHM.sub.2 is a full width at half maximum of a distribution curve of a misorientation angle at the grain boundary of the thin film).

A method includes providing a film of a high-temperature superconductor compound on a flexible substrate, where a portion of the film has a first oxygen state, and exposing a portion of the film to a focused ion beam to create a structure within the film. The structure may result from the portion of the film being partially or completely removed. The structure may be a trench along the length or width of the film. The method may include annealing the exposed portion of the film to a second oxygen state. The oxygen content of the second oxygen state may be greater or less than the oxygen content of the first oxygen state.

A method for producing a metal film from an over 50% nickel alloy melts more than one ton of the alloy in a furnace, followed by VOD or VLF system treatment, then pouring off to form a pre-product, followed by re-melting by VAR and/or ESU. The pre-product is annealed 1-300 hours between 800 and 1350 C. under air or protection gas, then hot-formed between 1300 and 600 C., such that the pre-product then has 1-100 mm thickness after the forming and is not recrystallized, recovered, and/or (dynamically) recrystallized having a grain size below 300 m. The pre-product is pickled, then cold-formed to produce a film having 10-600 m end thickness and a deformation ratio greater than 90%. The film is cut into 5-300 mm strips, annealed 1 second to 5 hours under protection gas between 600 and 1200 C. in a continuous furnace, then recrystallized to have a high cubic texture proportion.

Superconducting interconnects with ultra-low thermal conductivity capable of providing a direct connection between a millikelvin temperature environment and a 70 K temperature environment.

Superconducting interconnects with ultra-low thermal conductivity capable of providing a direct connection between a millikelvin temperature environment and a 70 K temperature environment.

This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.

A method for producing a metal film from an over 50% nickel alloy melts more than one ton of the alloy in a furnace, followed by VOD or VLF system treatment, then pouring off to form a pre-product, followed by re-melting by VAR and/or ESU. The pre-product is annealed 1-300 hours between 800 and 1350 C. under air or protection gas, then hot-formed between 1300 and 600 C., such that the pre-product then has 1-100 mm thickness after the forming and is not recrystallized, recovered, and/or (dynamically) recrystallized having a grain size below 300 m. The pre-product is pickled, then cold-formed to produce a film having 10-600 m end thickness and a deformation ratio greater than 90%. The film is cut into 5-300 mm strips annealed 1 second to 5 hours under protection gas between 600 and 1200 C. in a continuous furnace, then recrystallized to have a high cubic texture proportion.

It is an object to provide a substrate for epitaxial growth having a metal base material laminated with a copper layer. On a surface of the copper layer, an area occupied by crystal grains having crystal orientations other than a (200) plane present within 3 ?m from the surface can be less than 1.5%. A surface roughness along a same direction as a rolling direction per unit length of 60 ?m when measured by AFM can be Ra1<10 nm.

A superconducting wire includes a substrate and a superconducting material layer. The substrate includes a first main surface and a second main surface opposite to the first main surface. The superconducting material layer is disposed on the first main surface. Along at least a part of the superconducting wire in a direction in which the superconducting wire extends, the superconducting material layer is disposed to cover a side surface of the substrate in a width direction of the substrate and cover at least a part of the second main surface. A thickness of the superconducting material layer located on the first main surface varies along the width direction. A maximum thickness of the superconducting material layer located on the second main surface is smaller than a maximum thickness of the superconducting material layer located on the first main surface.