A method of depositing a layer on a semiconductor workpiece is disclosed. The method includes placing the semiconductor workpiece on a wafer chuck in a processing chamber, introducing a first precursor into the processing chamber, introducing a second precursor into the processing chamber, and while the second precursor is in the processing chamber, applying radiation to the semiconductor workpiece, whereby a surface of the semiconductor workpiece is heated. The method also includes, while the second precursor is in the processing chamber, applying a voltage bias to the wafer chuck.

The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

Embodiments of the present disclosure generally relate to a lid suitable for use in a semiconductor processing chamber. The lid includes a plurality of dielectric windows coupled to a perforated faceplate. The lid also includes a plurality of support members coupled to the perforated faceplate and positioned between adjacent dielectric windows. The lid further includes a plurality inductive couplers. One or more of the inductive couplers includes a first lower portion, a second lower portion, and a bridge. The bridge is disposed over at least one of the plurality of support members. The first lower portion is positioned on a first dielectric window of the plurality of dielectric windows. The second lower portion is positioned on a second dielectric window of the plurality of dielectric windows. The second dielectric window is adjacent to the first dielectric window.

A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

Disclosed is a plasma processing system with a faraday shielding device. The plasma processing system comprises a reaction chamber, and a faraday shielding device and an air inlet nozzle which are located on the reaction chamber. The air inlet nozzle penetrates through the faraday shielding device to introduce process gas into the reaction chamber. The air inlet nozzle is made of a conductive material, and the air inlet nozzle is electrically connected to the faraday shielding device. According to the plasma processing system, the air inlet nozzle made of the conductive material is electrically connected to the faraday shielding device, when the cleaning process is carried out, reaction gas of the cleaning process in the projection area of the air inlet nozzle is also electrically isolated, the reaction gas of the cleaning process forms a capacitive coupling plasma in the whole region below a dielectric window.

Multiple, sequential pulses of radiofrequency power are supplied to an electrode of a plasma processing chamber to control a plasma within the plasma processing chamber. Each of the pulses of radiofrequency power includes a first duration over which a first radiofrequency power profile exists, immediately followed by a second duration over which a second radiofrequency power profile exists. The first radiofrequency power profile has greater radiofrequency power than the second radiofrequency power profile. The first duration is less than the second duration. And, the sequential pulses of radiofrequency power are separated from each other by a third duration. A radiofrequency signal generation system is provided to generate and control the multiple, sequential pulses of radiofrequency power.

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.