A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.

The present disclosure relates to a fixture, the fixture is a fixture for a semiconductor etching machine, and the fixture includes: a support mechanism, configured to be arranged on an outer base of an electrostatic chuck of the semiconductor etching machine; a cleaning mechanism, being rotatably arranged on the support mechanism; and at least one cleaning unit, being arranged on the cleaning mechanism.

A system includes a reflector attached to a liner of a processing chamber. A light coupling device is to transmit light, from a light source, through a window of the processing chamber directed at the reflector. The light coupling device focuses, into a spectrometer, light received reflected back from the reflector along an optical path through the processing chamber and the window. The spectrometer detects, within the focused light, a first spectrum representative of a deposited film layer on the reflector using reflectometry. An alignment device aligns, in two dimensions, the light coupling device with the reflector until maximization of the focused light received by the light coupling device.

A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.

A method for removing residue deposits from a reaction chamber includes supplying a cleaning gas into the reaction chamber via direct delivery from a remote plasma source (RPS). The cleaning gas forms a plurality of gas flow streamlines within the reaction chamber. Each of the streamlines originates at an injection point for receiving the cleaning gas and terminates at a chamber pump port coupled to a fore line for evacuating the cleaning gas. A flow characteristic of the cleaning gas is modified to redirect at least a portion of the gas flow streamlines to circulate in proximity to an inner perimeter of the reaction chamber to remove the residue deposits or to enhance the diffusion of cleaning species to surfaces to be cleaned. The inner perimeter is disposed along one or more vertical surfaces of the reaction chamber that are orthogonal to a horizontal surface including the injection point.

A semiconductor device, a semiconductor equipment, and a semiconductor process method. The semiconductor process method includes a phase of wafer adsorption and a phase of wafer release and charge release. The phase of wafer adsorption includes: a power supply unit outputting an operating voltage to an electrostatic chuck, so as to control the electrostatic chuck to adsorb a wafer. The phase of wafer release and charge release includes: adjusting a voltage outputted by the power supply unit from the operating voltage to a charge release voltage, and maintaining for a first preset time to release some of the charges accumulated on the electrostatic chuck so as to avoid abnormal discharge; and switching the electrostatic chuck to be connected to a protective resistor, and maintaining for a second preset time to release the remaining charges accumulated on the electrostatic chuck.

An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.

A plasma system and a filter device are provided. In the system, an area surrounded by a dielectric window is configured as a first chamber for accommodating plasma. A first adapter is arranged under the dielectric window. An area surrounded by the first adapter is configured as a second chamber. A lower electrode platform is placed in the second chamber to carry a workpiece. A filter member of the filter device is placed at an intersection of the first chamber and the second chamber. The filter member includes through-holes configured to filter ions from the plasma. A first extension member extends from the filter member in a first direction and is placed over the first adapter. A second extension member extends from a position of the filter member adjacent to the first extension member to an inner side of the first adapter.