A method of sputtering using a high energy density plasma (HEDP) magnetron includes configuring an anode and cathode target magnet assembly in a vacuum chamber with a sputtering cathode target and substrate, applying regulated unipolar voltage pulses to a tunable pulse forming network, and adjusting amplitude and frequency of the unipolar voltage pulses to cause a resonance mode associated with the tunable pulse forming network and an output AC waveform generated from the pulse forming network. The output AC waveform is operatively coupled to the sputtering cathode target, and the output AC waveform includes a negative voltage exceeding the amplitude of the unipolar voltage pulses during sputtering discharge of the HEDP magnetron. An increase in the amplitude of the unipolar voltage pulses causes a constant amplitude of the negative voltage of the output AC waveform in response to the pulse forming network being in the resonance mode, thereby causing the HEDP magnetron sputtering discharge to form the layer on the substrate. A corresponding apparatus and computer-readable medium are disclosed.

To provide a process for producing a cylindrical target which has almost no distortion in the longitudinal direction. The process for producing a cylindrical target according to the present invention comprises the steps of: processing a target material into a cylindrical shape; providing an adapter for attachment to a sputtering apparatus, in the target material processed into the cylindrical shape; and measuring a straightness in a longitudinal direction of an appearance of the target material having the adapter to confirm whether the straightness of the target material having the adapter is within a predetermined range.

Certain example embodiments relate to sputtering apparatuses that include a plurality of targets such that a first one or ones of target(s) may be used for sputtering in a first mode, while a second one or ones of target(s) may be used for sputtering in a second mode. Modes may be switched in certain example embodiments by rotating the position of the targets, e.g., such that one or more target(s) to be used protrude into the main chamber of the apparatus, while one or more target(s) to be unused are recessed into a body portion of a cathode of (e.g., integrally formed with) the sputtering apparatus. The targets may be cylindrical magnetic targets or planar targets. At least one target location also may be made to accommodate an ion beam source.

A fabric is treated by applying a nanoparticle type coating to improve their resistance to contamination by foreign matter. The coating is applied during fabric manufacture and cured during heat setting. Alternatively, the coating applied or renewed by utilizing an existing shower or locating a spray boom or other suitable coating application device to apply the coating to the fabric in a controlled, uniform manner. Prior to application of the coating, the fabric is first thoroughly cleaned such as by showering or spraying, and then dried. Following controlled application of the coating, any excess material is removed by a suitable means, such as by vacuum, and the remaining coating on the fabric is then cured, either by utilizing the ambient heat of the equipment or by a portable bank of heaters. In this manner, the fabric does not have to be removed from the machine in order to apply or renew the contaminant resistant coating.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.

Methods and apparatus for low angle, selective plasma deposition on a substrate. A plasma chamber uses a process chamber having an inner processing volume, a three dimensional (3D) magnetron with a sputtering target with a hollow inner area that overlaps at least a portion of sides of the sputtering target and moves in a linear motion over a length of the sputtering target, a housing surrounding the 3D magnetron and the sputtering target such that at least one side of the housing exposes the hollow inner area of the sputtering target, and a linear channel interposed between the housing and a wall of the process chamber.

A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.

An end-block for use in a deposition apparatus, for connecting a cylindrical consumable target with magnetic bar, to an outside of the deposition apparatus, comprising at least drive means to provide a relative movement between consumable target and magnetic bar, the drive means comprising a driven shaft. The drive means comprising a consumable target motor and a consumable target drive shaft and/or a magnetic bar motor and a magnet bar drive shaft. The end-block housing including the end-block being substantially axially symmetric and coaxial with the driven shaft. Due to the axle symmetry, the end-block is universally mountable.

An apparatus to coat at least one three-dimensional (3D) object. The apparatus includes: a coating chamber; a vacuum pump system; a chamber port; and a rotatable object holder. The holder has a rotational axis Z. At least two rotary cathodes are positioned in the chamber. Each cathode includes a hollow cylindrical rotary target having a rotary axis Y. A magnetic system is swivel or rotary mounted round axis Y and positioned neighboring to an inner diameter surface of the target. At least one power supply is provided for the target. The targets of the at least two rotary cathodes are positioned round the holder, with their axes Y1, Y2 transverse to axis Z, both being offset to the holder in a z-direction, and being offset to each other in a direction along axis Z on opposite sides of an object plane O which is vertical to axis Z.

The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target.