Disclosed herein is an apparatus for adjusting the installation location of a temperature sensor configured to measure the surface temperature of a wafer in a semiconductor wafer cleaning apparatus. The apparatus includes: a bracket which is disposed in the upper end of the side wall of each of multi-station processing chambers (MPCs); a first fastening member which fastens a cable; a second fastening member which fastens a temperature sensor; a location adjustment member which fastens and supports the temperature sensor; the temperature sensor which is fixedly coupled to an end of the location adjustment member; a jig which includes a location adjustment plate and a control substrate, and which adjusts the detection location of the temperature sensor; and a controller which is provided with a wafer surface monitoring system configured to separate the surface temperature into a plurality of channels and to display the surface temperature.

A composition for dissolving abrasive particles, and a cleaning method using the composition are provided. The composition includes a sulfur-containing organic acid, a fluorine ion-containing compound, and a solvent, and a turbidity change rate (%) measured at 60° C. for 15 minutes may be in a range of −80 to −99.

To provide a composition for surface treatment capable of treating a surface of a polished object to be polished having both of a silicon-silicon bond and a nitrogen-silicon bond by sufficiently removing defects on the surface of the polished object to be polished. The composition for surface treatment contains a nonionic water-soluble polymer (A) having a main chain including only a carbon atom or a main chain consisting of a carbon atom and a nitrogen atom, and an anionic water-soluble polymer (B) having a main chain including only a carbon atom and a side chain having a sulfonic acid group or a group having a salt thereof or a carboxyl group or a group having a salt thereof, and being bonded to the main chain including only a carbon atom, and the composition is used for surface treatment of a polished object to be polished containing a silicon-silicon bond and a nitrogen-silicon bond and a pH of the composition is less than 9.0.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

A method of processing a substrate may include preparing the substrate, polishing the substrate, and cleaning the substrate using a double nozzle, which is configured to provide a spray and a chemical solution onto the substrate. The spray may include a deionized water, and the chemical solution may be diluted with the deionized water. The chemical solution and the spray may be spaced apart from each other by a distance of 7 cm to 12 cm.

The present invention relates to a cleaning fluid containing components (A) to (C) and 0.001 mass % or less of a surfactant, in which component (A) is a compound represented by formula (1); component (B) is an alkaline compound; and component (C) is water,

##STR00001## in formula (1), R.sub.1 and R.sub.2 independently represent a hydroxyl group or a phenol group.

An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

A method of manufacturing a wafer assembly includes forming an array of planar wafer level metal posts extending from a surface of a substrate of a first wafer. After forming the array of posts, an oxide layer is applied over the surface of the first wafer and around the array of posts, the oxide layer being applied at a temperature of below 150 degrees Celsius.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.