An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25° C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.

Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, ##STR00001## in which, in Formula (1) above, R.sup.1 is a hydrocarbon group having 1 to 5 carbon atoms and R.sup.2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

The present invention provides a cleaning composition for post CMP cleaning and method for post CMP cleaning microelectronic device. The cleaning composition according to the invention includes at least one chelating agent, at least one organic solvent, at least one polycarboxylic acid, at least one basic pH adjustor, at least one metal anticorrosive agent, and water. The TMAH-free cleaning composition according to the invention provides improved cleaning efficiency and electrochemical compatibility with both cobalt and copper materials.

An object of the invention is to provide a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in cleaning performance and corrosion prevention performance with respect to copper-containing and cobalt-containing metal films. Another object of the invention is to provide a method of cleaning semiconductor substrates having undergone CMP. A cleaning liquid of the invention is for semiconductor substrates having undergone CMP and includes: a component A that is an amino acid having one carboxyl group; a component B that is at least one selected from the group consisting of an aminopolycarboxylic acid and a polyphosphonic acid; and a component C that is an aliphatic amine (provided that the component A, the aminopolycarboxilic acid and a quaternary ammonium compound are excluded). The mass ratio of the component B content to the component A content is 0.2 to 10, and the mass ratio of the component C content to the sum of the component A content and the component B content is 5 to 100.

There is provided a means capable of sufficiently removing organic residues present on the surface of an object to be polished after polishing containing silicon nitride or polysilicon. A surface treatment composition containing: a polymer having a constituent unit represented by Formula (1) in [Chem. 1] below; at least one of an anionic surfactant and a nonionic surfactant; and water, in which the surface treatment composition is used for treating the surface of an object to be polished after polishing,

##STR00001## in which, in Formula (1) above, R.sup.1 is a hydrocarbon group having the number of carbon atoms of 1 to 5, and R.sup.2 is a hydrogen atom or a hydrocarbon group having the number of carbon atoms of 1 to 3.

An object of the present invention is to provide a method for producing a treatment liquid, having excellent filterability.

The method for producing a treatment liquid of an embodiment of the present invention is a method for producing a treatment liquid, the method including filtering an object to be purified including a surfactant, using a first filter having a first filter medium, to produce a treatment liquid for a semiconductor substrate, in which the first filter medium includes at least one selected from the group consisting of a nylon, a polyallyl sulfonic acid, a perfluoroalkoxy alkane which has been subjected to a hydrophilization treatment, a polytetrafluoroethylene which has been subjected to a hydrophilization treatment, a polyolefin which has been subjected to a hydrophilization treatment, and a polyvinylidene fluoride which has been subjected to a hydrophilization treatment, and the surfactant includes at least one selected from the group consisting of a nonionic surfactant including a group represented by Formula (1) and an anionic surfactant including a group represented by Formula (1).

Formula (1) (LO).sub.n

L represents an alkylene group, and n represents 3 to 55.

A cleaning liquid for cleaning a substrate in which at least one of molybdenum and tungsten is exposed on a surface, in which the cleaning liquid includes at least one of a compound represented by General Formula (a1), a hydrate of the compound, and a salt of the compound, a water-soluble basic compound with a pH of 9.5 or more in a 0.1 M aqueous solution, which is measured at 23° C. with a pH meter, and water. In General Formula (a1), R.sup.1 and R.sup.2 each independently represents an organic group including no carbonyl group or a hydrogen atom

##STR00001##

A method for fabricating a semiconductor structure includes providing a dielectric layer on a semiconductor substrate, forming an opening in the dielectric layer to expose a portion of the surface of the semiconductor substrate, forming a metal layer to fill up the opening, and removing the portion of the metal layer formed above the top surface of the dielectric layer by polishing. A metal oxide layer is formed on the surface of the metal layer after polishing. The method further includes removing the metal oxide layer from the top surface of the metal layer, forming a metal barrier layer on the top surface of the metal layer after the removal of the metal oxide layer to provide a more uniform thickness and a denser texture, and converting the metal barrier layer to a metal cap layer by introducing a silicon-containing gas onto a surface of the metal barrier layer.

Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO.sub.2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.