It is to provide a manufacturing method of a semiconductor device including the following steps of: preparing a semiconductor substrate having a silicon nitride film on the rear surface; forming an interlayer insulating film having a via hole on the main surface of the semiconductor substrate; and forming a via-fill selectively within the via hole. The method further includes the steps of: performing the wafer rear surface cleaning to expose the surface of the silicon nitride film formed on the rear surface of the semiconductor substrate; and thereafter, forming a photoresist film made of chemical amplification type resist on the interlayer insulating film and the via-fill over the main surface of the semiconductor substrate, in which the semiconductor substrate is stored in an atmosphere with the ammonium ion concentration of 1000 μg/m.sup.3 and less.

Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

A system for performing a chemical mechanical polishing (CMP) process is provided. The system includes a CMP tool configured to polish a semiconductor wafer. The processing system further includes a wafer stage configured to support the semiconductor wafer for facilitating the insertion of the semiconductor wafer into, and its subsequent removal from, the CMP tool. The processing system also includes a number of spray nozzles positioned relative to the wafer stage. In addition, the processing system includes a spray generator connected to the spray nozzles and configured to convert a mixture to a mist spray. The processing system further includes a controller configured to activate flow of the mist spray from the spray generator to the spray nozzles to discharge the mist spray over the semiconductor wafer supported by the wafer stage.

A cleaning system for processing a substrate after polishing includes a sulfuric peroxide mix (SPM) module, at least two cleaning elements, and a plurality of robots. The SPM module includes a sulfuric peroxide mix (SPM) cleaner having a first container to hold a sulfuric peroxide mix liquid and five to twenty first supports to hold five to twenty substrates in the liquid in the first container, and a rinsing station having a second container to hold a rinsing liquid and five to twenty second supports to hold five to twenty substrates in the liquid in the second container. Each of the at least two cleaning elements are configured to process a single substrate at a time. Examples of a cleaning element include a megasonic cleaner, a rotating brush cleaner, a buff pad cleaner, a jet spray cleaner, a chemical spin cleaner, a spin drier, and a marangoni drier.

Provided are formulations that offer a high cleaning effect on inorganic particles, organic residues, chemical residues, reaction products on the surface due to interaction of the wafer surface with the Chemical Mechanical Planarization (CMP) slurry and elevated levels of undesirable metals on the surface left on the semiconductor devices after the CMP. The post-CMP cleaning formulations comprise one or more organic acid, one or more polymer and a fluoride compound with pH<7 and optionally a surfactant with two sulfonic acid groups.

High-performance substrate cleaning apparatus, substrate cleaning method, substrate processing apparatus, and substrate drying apparatus are provided. A substrate cleaning apparatus, including: a substrate holding and rotating mechanism that holds and rotates a substrate; a first cleaning mechanism that brings a cleaning tool into contact with the substrate to clean the substrate, cleans the substrate using two-fluid jet, or cleans the substrate using ozone water; and a second cleaning mechanism that cleans the substrate using an ultrasonic cleaning liquid is provided.

A plasma-based ashing process for surface conditioning and material modification to improve bond pad metallurgical properties as well as semiconductor device performance. Residue materials generated in a removal process at a process layer having recessed features with Ni—Pd surfaces are ashed in a plasma reactor to reduce defect count and improve surface conditioning associated with bond pads of the semiconductor device.

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

The present invention relates to a cleaner composition. Specifically, the present invention relates to a cleaner composition that can be used to remove metal oxides and metal abrasive particles arising during metal polishing, such as chemical mechanical planarization (CMP). The cleaner composition has an improved ability to complex with metal abrasive particles. In addition, the cleaner composition maintains its ability to reduce metal abrasive particles, achieving improved stability. Therefore, the cleaner composition can be used for cleaning the surface of a metal with an increased ability to prevent corrosion of the metal surface.

The present disclosure relates to cleaning compositions that can be used to clean semiconductor substrates. These cleaning compositions can be used to remove defects arising from previous processing steps on these semiconductor substrates. These cleaning compositions can remove the defects/contaminants from the semiconductor substrates and thereby make the substrates appropriate for further processing. The cleaning compositions described herein primarily contain at least one organic acid and at least one anionic polymer.