The present disclosure relates to a semiconductor wafer cleaning composition for used in a semiconductor device manufacturing process and to a method of cleaning a semiconductor wafer using the cleaning composition. The cleaning composition includes surfactants represented by Formula 1 and Formula 2, respectively, an organic or inorganic acid, and water occupying for the remaining proportion. The cleaning method is a method of immersing a semiconductor wafer in the cleaning composition for 100 to 500 seconds. The cleaning composition and the cleaning method according to the present disclosure provide an incredibility improved removal rate and an effective cleaning power for contaminants, especially organic wax, during a process of polishing the surface of a wafer used to manufacture semiconductor devices, thereby providing a super-cleaned wafer surface, resulting in production of reliable semiconductor devices.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

The present disclosure provides a semiconductor structure and a method preparing it. After planarization of the Cu layer, a Si substrate is dry etched, so that a first height difference is configured in between the top surfaces of the the Si substrate and an insulating layer. By means of a wet etch process, Cu residues near an edge of a Cu post may be effectively removed. A second height difference is configured in between the top surfaces of the Cu post and the insulating layer. The first height difference is arranged to be greater than the second height difference. Channeling of Cu trace residues through the insulating layer are thereby avoided, effectively mitigating electrical leakage. Further, the Si substrate may be covered by a passivation layer, to prevent a conductive channel from being formed on the Si substrate, thereby further avoiding negative impact on the electrical properties of the device.

The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

A method of processing a substrate may include preparing the substrate, polishing the substrate, and cleaning the substrate using a double nozzle, which is configured to provide a spray and a chemical solution onto the substrate. The spray may include a deionized water, and the chemical solution may be diluted with the deionized water. The chemical solution and the spray may be spaced apart from each other by a distance of 7 cm to 12 cm.

The invention provides compositions useful in post-CMP cleaning operations, particularly those substrates which contain exposed copper surfaces. The compositions of the invention provide excellent cleaning of such substrates while showing fewer defects from silica and organic materials present at the surface of the substrate. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in two or more containers, the components of the compositions.

A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

The present invention relates to a cleaning fluid containing components (A) to (C) and 0.001 mass % or less of a surfactant, in which component (A) is a compound represented by formula (1); component (B) is an alkaline compound; and component (C) is water,

##STR00001## in formula (1), R.sub.1 and R.sub.2 independently represent a hydroxyl group or a phenol group.

A method includes receiving a structure having a substrate, a conductive feature over the substrate, and a dielectric layer over the conductive feature. The method further includes forming a hole in the dielectric layer to expose the conductive feature; forming a first metal-containing layer on sidewalls of the hole; and forming a second metal-containing layer in the hole and surrounded by the first metal-containing layer. The first and the second metal-containing layers include different materials. The method further includes applying a first chemical to recess the dielectric layer, resulting in a top portion of the first and the second metal-containing layers protruding above the dielectric layer; and applying a second chemical having fluorine or chlorine to the top portion of the first metal-containing layer to convert the top portion of the first metal-containing layer into a metal fluoride or a metal chloride.