Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

A substrate recycling method according to the present disclosure is intended for allowing reuse of a first processed substrate obtained by detaching a semiconductor device layer formed on a growth substrate. The substrate recycling method includes a first recycling process of, when the first processed substrate has a thickness greater than a predetermined thickness, polishing a surface of the first processed substrate and obtaining the growth substrate, and a second recycling process of, when the first processed substrate has a thickness less than the predetermined thickness, forming a substrate reclamation layer on the first processed substrate, and polishing a surface of the substrate reclamation layer and obtaining the growth substrate.

A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO.sub.2), copper (Cu), and low-k dielectric materials.

Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Methods for manufacturing a microfluidic delivery device comprising a semiconductor structure, such as silicon, are provided. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses semiconductor material, such as silicon, to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.

A cavity structure comprises one or more seed surfaces, a first growth path for the growth of a first semiconductor structure from one of the one or more seed surfaces and a second growth path for the growth of a second semiconductor structure from one of the one or more seed surfaces. The cavity structure further comprises at least one opening for supplying precursor materials to the cavity structure. A method can include selectively growing the first semiconductor structure along the first growth path and selectively growing the second semiconductor structure along the second growth path. The first semiconductor structure has a first growth front and the second semiconductor structure has a second growth front. The method can further include merging the first and the second growth front at a border area of the first and the second semiconductor structure.

A substrate includes a ceramic core, a first adhesion layer, a barrier layer, and a second adhesion layer. The first adhesion layer encapsulates the ceramic core and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the first adhesion layer has a first ratio. The barrier layer encapsulates the first adhesion layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the barrier layer has a second ratio that is different from the first ratio. The second adhesion layer encapsulates the barrier layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the second adhesion layer has a third ratio that is different from the second ratio.

A device includes an epitaxially grown crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters which result in the dominant growth component of the crystal to be supplied laterally from side walls of the insulator. In a preferred embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique.

The present disclosure provides a method for preparing heterostructure, which includes providing a donor substrate and forming a sacrificial layer on a surface of the donor substrate; forming a thin film cover layer on a surface of the sacrificial layer, wherein a top surface of the thin film cover layer is an implantation surface; performing ion implantation from the implantation surface, such that a defect layer is formed in the sacrificial layer; providing an acceptor substrate, and bonding the acceptor substrate to the implantation surface of the thin film cover layer; removing the sacrificial layer along the defect layer. The method for preparing the heterostructure of the present disclosure can successfully transfer the thin film cover layer to the acceptor substrate. The present disclosure can provide a compliant substrate, while the semiconductor donor substrate material can be reused, therefore is energy-efficient and environmental-friendly.