A method of manufacturing a semiconductor device includes: forming a first outer box and a second outer box on a wafer, providing a photoresist layer on the wafer; and by removing a portion of the photoresist layer, forming a photoresist pattern including a first opening and a second opening that are horizontally apart from each other, wherein the first opening defines a first inner box superimposed on the first outer box in a plan view, the second opening defines a second inner box superimposed on the second outer box in the plan view, and a horizontal distance between the first opening and the second opening is about 150 μm to about 400 μm.

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):

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wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B.sup.1 and B.sup.2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B.sup.1 and B.sup.2 optionally form a ring with a carbon atom bonded to B.sup.1 and B.

Provided are a resist compound, a method of forming a pattern by using the same, and a method of manufacturing a semiconductor device using the same. According to the present disclosure, the compound may be represented by Formula 1:

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Techniques for low- or zero-misaligned vias are disclosed. In one embodiment, a high-photosensitivity and low-photosensitivity photoresist are applied to a substrate and exposed at the same time with use of a dual-tone mask. After being developed, one photoresist forms an overhang over a sheltered region. The mold formed by the photoresists is filled with copper and then etched. The overhang prevents the top of the copper infill below the overhang region from being etched. As such, the sheltered region forms a pillar or column after etching, which can be used as a via. Other embodiments are disclosed.

A resist underlayer film that exhibits removability and preferably solubility only in wet etching reagent solutions, while exhibiting good resistance to resist developers that are resist solvents or aqueous alkali solutions. The composition for forming a resist underlayer film includes a dicyanostyryl group-bearing polymer (P) or dicyanostyryl group-bearing compound (C) and includes solvent, and does not contain a protonic acid curing catalyst and does not contain an alkylated aminoplast crosslinking agent derived from melamine, urea, benzoguanamine, or glycoluril.

A photolithographic exposure method for a memory. In a photolithographic process for making a memory, when exposure is performed by using a mask, regions with different exposure dimension requirements on the memory are divided into different exposure groups. Regions with the same exposure resolution requirement are divided into the same group. Different exposure modes of exposure that are capable of correspondingly satisfying resolution requirements of each group are performed to different groups during exposure. During exposure, different illumination modes are adopted to perform exposure. Firstly, a first exposure mode is adopted to perform exposure to a memory array cell exposure group, then a wafer is kept stationary on a supporting platform, and then a second exposure mode is adopted to perform exposure to the other structure exposure group; after the exposure of all groups is completed, one-step development is performed to complete pattern transfer.

The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

An embodiment includes a method of texturing a semiconductor substrate, a semiconductor substrate manufactured using the method, and a solar cell including the semiconductor substrate, the method including: forming metal nanoparticles on a semiconductor substrate, primarily etching the semiconductor substrate, removing the metal nanoparticles, and secondarily etching the primarily etched semiconductor substrate to form nanostructures.

Provided is a method of manufacturing a semiconductor device, including providing a substrate including a first region and a second region; forming an alignment mark in the substrate in the second region; forming a material layer on a first surface of the substrate in the first region and the second region; introducing heteroatoms into the substrate in the second region from a second surface of the substrate; and reacting the heteroatoms with the substrate to form a dielectric layer overlapping the alignment mark in the substrate in the second region.