A semiconductor device may be manufactured using a multiple-layer photoresist that is formed of one or more materials that reduce the likelihood and/or amount of residual material retained in the multiple-layer photoresist. A photoresist underlayer of the multiple-layer photoresist includes a polymer having a highly uniform distribution of polar group monomers. Additionally and/or alternatively, the photoresist underlayer includes a polymer that includes a main chain and a plurality of side chains coupled with the main chain. The side chains include an acid generator component. Since the acid generator component is coupled with the main chain of the polymer by the side chains as opposed to uncontrollably diffusing into the photoresist layer, the acid generated by the acid generator component upon exposure to radiation collects under the bottom of the photoresist layer in a uniform manner and enables the bottommost portions of the photoresist layer to be developed and removed.

A method for producing a laminate having a surface-modified layer and a semiconductor substrate includes: a first step of applying a surface modifier containing a polymer and a solvent to the semiconductor substrate, and then baking the semiconductor substrate to cross-link the polymer and to form a surface-modified layer precursor; and a second step of bringing the surface-modified layer precursor into contact with a thinning liquid to thin the surface-modified layer precursor and to form a surface-modified layer having a film thickness of 5 nm or less.