A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

Techniques herein enable integrating stack materials and multiple color materials that require no corrosive gases for etching. Techniques enable a multi-line layer for self-aligned pattern shrinking in which all layers or colors or materials can be limited to silicon-containing materials and organic materials. Such techniques enable self-aligned block integration for 5 nm back-end-of-line trench patterning with an all non-corrosive etch compatible stack for self-aligned block. Embodiments include using lines of a same material but at different heights to provided etch selectivity to one of several lines based on type of material and/or height of material and etch rate.

Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.

A method for patterning topography is provided. A substrate is provided with a plurality of lines. The method includes aligning and preparing a first directed self-assembly (DSA) pattern overlying the lines, transferring the first pattern to form first line cuts, aligning and preparing a second DSA pattern overlying the lines, and transferring the second pattern to form second line cuts. The DSA patterns include trenches and holes of diameter d, and each comprise a block copolymer having HCP morphology, a characteristic dimension L.sub.o approximately equal to the line pitch, and a minority phase of the diameter d. The trenches are wet by a majority phase of the block copolymer and guide formation of the holes. The aligning and preparation of the DSA patterns include overlapping the two sets of trenches such that areas between holes of one pattern and adjacent holes of the other pattern are shared by adjacent trenches.

A method for patterning a metal layer includes depositing a hard mask layer on a metal layer, depositing a first patterned layer on the hard mask layer, forming a first set of sidewall spacers on sidewalls of features of the first patterned layer, forming a second set of sidewall spacers on sidewalls of the first set of sidewall spacers, removing the first set of sidewall spacers, and performing a reactive ion etching process to pattern portions of the metal layer exposed through the first patterned layer and the second set of sidewall spacers.

A design aware system, method, and computer program product are provided for detecting overlay-related defects in multi-patterned fabricated devices. In use, a design of a multi-patterned fabricated device is received by a computer system. Then, the computer system automatically determines from the design one or more areas of the design that are prone to causing overlay errors. Further, an indication of the determined one or more areas is output by the computer system to an inspection system for use in inspecting a multi-patterned device fabricated in accordance with the design.

Embodiments of the invention provide a substrate processing method for bottom-up formation of a film in a recessed feature. According to one embodiment, the method includes providing a substrate containing a first layer and a second layer on the first layer, the second layer having a recessed feature extending through the second layer, and depositing a non-conformal mask layer on the substrate, where the mask layer has an overhang at an opening of the recessed feature. The method further includes removing the mask layer from a bottom of the recessed feature, while maintaining at least a portion of the overhang at the opening, selectively depositing a film on the bottom of the recessed feature, and removing the mask layer overhang from the substrate. The processing steps may be repeated at least once until the film has a desired thickness in the recessed feature.

The present disclosure relates to a method for manufacturing pillar or hole structures in a layer of semiconductor device, and associated semiconductor structure. At least one embodiment relates to a method for manufacturing pillar structures in a layer of a semiconductor device. The pillar structures are arranged at positions forming a hexagonal matrix configuration. The method includes embedding alignment pillar structures in a backfill brush polymer layer. The method also includes providing a BCP layer on a substantially planar surface defined by an upper surface of the alignment pillar structures and the backfill brush polymer layer. Further, the method includes inducing polymer microphase separation of the BCP polymer layer into pillar structures of a first component of the BCP polymer layer embedded in a second component of the BCP polymer layer.

A method for forming a patterned layer is provided. The method comprises forming a first material layer over a first substrate, forming a photoresist layer on the first material layer, wherein the photoresist layer includes at least one island portion and a spacing surrounding a lateral portion of the island portion, trimming the island portion to enlarge the spacing, forming a second material layer filled in the enlarged spacing and surrounding the trimmed island portion, removing the trimmed island portion to form a first opening passing through the second material layer and exposing a portion of the first material layer, and removing the exposed portion of the first material layer through the first opening to form a second opening in the first material layer.

A substrate treatment method of treating a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, includes: a resist pattern formation step of forming a predetermined resist pattern by a resist film on the substrate; a thin film formation step of forming a thin film for suppressing deformation of the resist pattern on a surface of the resist pattern; a block copolymer coating step of applying a block copolymer to the substrate after the formation of the thin film; and a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer.