The present invention relates to a method for connecting an electrical contact to a nanomaterial carried by a substrate. At least one layer of soluble lithography resist is provided on the nanomaterial. An opening in the at least one layer of resist exposes a surface portion of the nanomaterial. At least a portion of the exposed surface portion of the nanomaterial is removed to thereby expose the underlying substrate and an edge of the nanomaterial. A metal is deposited on at least the edge of the nanomaterial and the exposed substrate such that the metal forms an electrical contact with the nanomaterial. Removing at least a portion of the soluble lithography resist from the nanomaterial such that at least a portion of the two-dimensional material is exposed.

To further reduce contact resistance when a current or a voltage is taken out from a metal layer.

A conductive structure including: an insulating layer; a metal layer provided on one surface of the insulating layer to protrude in a thickness direction of the insulating layer; and a two-dimensional material layer provided along outer shapes of the metal layer and the insulating layer from a side surface of the metal layer to the one surface of the insulating layer.

According to one embodiment, a semiconductor device includes a first layer, a first electrode, and a first nitride region. The first layer includes a first material and a first partial region. The first material includes at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium. The first partial region is of a first conductivity type. The first conductivity type is one of an n-type or a p-type. A direction from the first partial region toward the first electrode is aligned with a first direction. The first nitride region includes Al.sub.x1Ga.sub.1-x1N (0x1<1), is provided between the first partial region and the first electrode, is of the first conductivity type, and includes a first protrusion protruding in the first direction.

A laminated body of an embodiment includes: a silicon layer; a first beryllium oxide layer on the silicon layer; and a diamond semiconductor layer on the first beryllium oxide layer.

The present disclosure provides a manufacturing method of a thin film transistor, including: selecting a substrate, and forming a bottom gate, a gate insulating layer and a source-drain above the selected substrate, wherein the bottom gate and the source-drain adopts a conductive metal oxide with an adjustable work function as a metal conducting electrode; rinsing and drying the source-drain of the selected substrate, and ozone cleaning dried source-drain for a predetermined time under a predetermined illumination condition, bombarding the source-drain with oxygen plasma for a period of time, forming an active layer made of a carbon material over the source-drain; forming a passivation layer over the active layer. The implementation of the disclosure can reduce the contact resistance and improve the performance of the carbon-based thin film transistor device by adjusting the work function of the contact surface between the conductive metal and the active layer.

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and Wherein the n-type donor atoms are introduced to the lattice through ion tracks.

According to one embodiment, a semiconductor device includes a first layer, a first electrode, and a first nitride region. The first layer includes a first material and a first partial region. The first material includes at least one selected from the group consisting of silicon carbide, silicon, carbon, and germanium. The first partial region is of a first conductivity type. The first conductivity type is one of an n-type or a p-type. A direction from the first partial region toward the first electrode is aligned with a first direction. The first nitride region includes Al.sub.x1/Ga.sub.1-x1/N (0x1<1), is provided between the first partial region and the first electrode, is of the first conductivity type, and includes a first protrusion protruding in the first direction.

A method, e.g. of forming an electronic device, includes forming a carbon-doped metal layer over a substrate. The carbon-doped metal layer is heated and cooled such that a first graphene layer is formed on a top surface of the carbon-doped metal layer, and a second graphene layer is formed between the carbon-doped metal layer and the substrate. A portion of the first graphene layer is removed and a portion of the carbon-doped metal layer is removed, thereby forming first and second spaced-apart contact layers on the second graphene layer.

A method of producing a structure comprising a substrate (11) having at least one integral first face at a first angle relative to a normal from the substrate, at least one second integral second face at a second angle relative to a normal from the substrate; with a cavity in the structure between the first and second faces; the method comprising the steps of: coating a portion (15) of the first face with a first conducting layer; coating a portion (18) of the second face with a second conducting layer; and depositing in the cavity an active material (31) to provide ohmic and rectifying contacts for insertion or extraction of charge from the active material by way of the first and second conducting layers. The active material may be photovoltaic, light emitting or ion conducting.

Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm.sup.2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks.