A semiconductor manufacturing apparatus for processing an object having a first surface and a second surface opposite to the first surface, includes: a first processor having a chuck in a first chamber, the chuck having a chuck surface configured to chuck the object, the chuck surface having protrusions adjacent to each other along one direction of the chuck surface, the protrusions being configured to be pressed against the second surface to form depressions adjacent to each other along one direction on the second surface; and a second processor configured to expose the second surface to a chemical solution in a second chamber to process the depressions into a trench, the trench extending along the one direction on the second surface.

Embodiments herein are directed to localized stress modulation by implanting a first side of a substrate to reduce in-plane distortion along a second side of the substrate. In some embodiments, a method may include providing a substrate, the substrate comprising a first main side opposite a second main side, wherein a plurality of features are disposed on the first main side, performing a metrology scan to the first main side to determine an amount of distortion to the substrate due to the formation of the plurality of features, and depositing a stress compensation film along the second main side of the substrate, wherein a stress and a thickness of the stress compensation film is determined based on the amount of distortion to the substrate. The method may further include directing ions to the stress compensation film in an ion implant procedure.

Techniques herein include methods for forming a direct write, tunable stress film and methods for correcting wafer bow using said stress film. The method can be executed on a coater-developer tool or track-based tool. The stress film can be based on a film that undergoes crosslinking/decrosslinking under external stimulus where direct write is achieved by, but is not limited to, 365 nm exposure and subsequent cure is used to “pattern-in” stress. No develop step may be required, which provides additional significant benefit in conserving film planarity. An amount of bow (or internal stress to create or affect a bow signature) can be tuned with exposure dose, bake temperature, bake time and number of bakes.

A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.

According to claim 1, the invention relates to a method for providing at least one solid-body layer (4). The solid-body layer (4) is separated from a solid body (1). The method according to the invention preferably has the steps of: producing a plurality of modifications (9) in the interior of the solid body (1) using laser beams in order to form a separation plane (8), compressive stresses being produced in the solid body (1) by the modifications (9); separating the solid-body layer (4) by separating the remaining solid body (1) and the solid-body layer (4) along the separation plane (8) formed by the modifications (9), wherein at least parts of the modifications (9) which produce the compressive stresses remain on the solid-body layer (4), and enough modifications (9) are produced that the solid-body layer (4) is separated from the solid body (1) on the basis of the modifications (9) or an external force is introduced into the solid body (1) in order to produce additional stresses in the solid body (1), said external force being so great that the stresses cause a crack to propagate along the separation plane (8) produced by the modifications; and producing a metal layer on the surface exposed by the separation of the solid-body layer (4) from the solid body (1) in order to at least partly, preferably greatly and particularly preferably completely, compensate for a deformation of the solid-body layer (4) produced by the compressive stresses of the remaining modification parts or at feast partly, preferably greatly or completely, compensate for the compressive stresses.

A physically unclonable function is an object that has characteristics that make it extremely difficult or impossible to copy. An array of randomly dispersed hard (magnetized) and soft (non-magnetized) magnetic particles that may be conducting or nonconducting that are disbursed in a binder create a particular magnetic field or capacitive pattern on the surface. This surface magnetic field and capacitive variations can be considered to be a unique pattern similar to fingerprint. The Hall effect prism is a sensor that measures the effects of these patterns by sensing the deformation of currents or electric potential flowing within or around a resistive substrate material that exhibits a substantial Hall effect coefficient.

A physically unclonable function is an object that has characteristics that make it extremely difficult or impossible to copy. An array of randomly dispersed hard (magnetized) and soft (non-magnetized) magnetic particles that may be conducting or nonconducting that are disbursed in a binder create a particular magnetic field or capacitive pattern on the surface. This surface magnetic field and capacitive variations can be considered to be a unique pattern similar to fingerprint. The Hall effect prism is a sensor that measures the effects of these patterns by sensing the deformation of currents or electric potential flowing within or around a resistive substrate material that exhibits a substantial Hall effect coefficient.

A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.

A manufacturing method of a template includes: providing a base; forming a photoresist pattern on the base and patterning the base by using the photoresist pattern as a mask, and the forming the photoresist pattern includes: forming a plurality of first patterns spaced apart from each other on the base; forming a first material layer on the plurality of first patterns; patterning the at least one first pattern by using the first material layer as a mask so that the first pattern is formed into at least one first sub-pattern; and removing the first material layer; and the first material layer at least cover one side of at least one of the plurality of first patterns in a direction perpendicular to a surface on which the base is located.