Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element includes a first layer and a second layer over the first layer. The dielectric constant of the first layer is greater than the dielectric constant of the second layer. A gate dielectric layer of the gate stack adjoins the first layer and the second layer.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The semiconductor device structure further includes a spacer element over a sidewall of the gate stack. The spacer element includes a first layer and a second layer over the first layer. The dielectric constant of the first layer is greater than the dielectric constant of the second layer. A gate dielectric layer of the gate stack adjoins the first layer and the second layer.

According to one aspect of the technique of the present disclosure, there is provided a method of displaying substrate arrangement data, including: (a) setting each of a transport parameter for determining at least an arrangement of substrates to be loaded into a substrate retainer and carrier information of a carrier storing the substrates to be loaded into the substrate retainer; (b) creating the substrate arrangement data of a case where the substrates are loaded into the substrate retainer based on the transport parameter and the carrier information set in (a); and (c) displaying the substrate arrangement data at least comprising data representing the arrangement of the substrates in a state where the substrates are loaded in the substrate retainer.

A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

A vaporization supply device includes a vaporizer for heating and vaporizing a liquid raw material L, a flow rate controller for controlling a flow rate of the gas supplied from the vaporizer to a gas supply destination, and a controller for heating the inside of the vaporizer to obtain a necessary gas flow rate, and performing a feedback control so that a pressure becomes equal to or higher than a predetermined value. The controller is configured so as to stop the feedback control at the time point when the flow rate control by the flow rate controller starts, then heat the liquid raw material by an amount of heat provided to the vaporizer more than the heat that has already been provided immediately before the feedback control ends, and change to the feedback control after a predetermined time has elapsed from the time point when the flow rate control by the flow rate controller starts.

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

An integrated circuit structure comprises a semiconductor fin protruding through a trench isolation region above a substrate. A gate structure is over the semiconductor fin. A plurality of vertically stacked nanowires is through the gate structure, wherein the plurality of vertically stacked nanowires includes a top nanowire adjacent to a top of the gate structure, and a bottom nanowire adjacent to a top of the semiconductor fin. A dielectric material covers only a portion of the plurality of vertically stacked nanowires outside the gate structure, such that one or more one of the plurality of vertically stacked nanowires starting with the top nanowire is exposed from the dielectric material. Source and drain regions are on opposite sides of the gate structure connected to the exposed ones of the plurality of vertically stacked nanowires.

A substrate processing technique including: a module including a gas supplier having an upstream side gas guide and a supply structure, a reaction tube communicating with the gas supplier, and a gas exhauster; a supply pipe connected to the gas supplier, and an exhaust pipe connected to the gas exhauster; a carry chamber adjacent to a plurality of the modules; and a piping arrangement region in which the supply pipe or the exhaust pipe can be arranged, in which the reaction tube is disposed at a position overlapping the carry chamber, when the supply pipe is disposed in the piping arrangement region, the gas exhauster is disposed at a position oblique to the shaft and not overlapping the carry chamber, and when the exhaust pipe is disposed in the piping arrangement area, the gas supplier is disposed at a position oblique to the shaft and not overlapping the carry chamber.

There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.

A display substrate and a method for manufacturing the same are provided. The display substrate includes a base substrate and a display element provided on the base substrate. The method includes steps of forming a first protection layer at at least one of outer peripheral sides of the base substrate, and removing the first protection layer before attaching a cover plate to the base substrate on which the display element is provided.