According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

When a gas supplied to a gas injection unit is switched from a first processing gas to a second processing gas, a controller of a gas supply system performs control to open a first supply on/off valve connected to the gas injection unit and provided in a first gas supply line for supplying the first processing gas and a second exhaust on/off valve provided in a first gas exhaust line branched from the first gas supply line, close a second supply on/off valve connected to the gas injection unit and provided in a second gas supply line for supplying the second processing gas and a first exhaust on/off valve provided in a second gas exhaust line branched from the second gas supply line; and then open the second supply on/off valve and the first exhaust on/off valve and close the first supply on/off valve and the second exhaust on/off valve.

An oxide film forming device includes: a chamber in which a target workpiece is removably placed; a gas supply unit arranged at a position opposed to a film formation surface of the target workpiece placed in the chamber; and a gas discharge unit arranged to discharge a gas inside the chamber by suction to the outside of the chamber. The gas supply unit has a raw material gas supply nozzle, an ozone gas supply nozzle and an unsaturated hydrocarbon gas supply nozzle with supply ports thereof opposed to the film formation surface of the target workpiece at a predetermined distance away from the film formation surface. A raw material gas, an ozone gas and an unsaturated hydrocarbon gas supplied from the respective supply nozzles are mixed in a space between the supply ports and the film formation surface.

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.

A method for forming an oligomer-containing layer on a substrate and in a concave portion formed on the substrate by performing a cycle a predetermined number of times under a first temperature, the cycle including supplying a precursor gas to the substrate, and supplying first and second nitrogen- and hydrogen-containing gases to the substrate, so an oligomer including an element in at least one selected from the group of the precursor gas, and the first and second nitrogen-hydrogen-containing gasses, flowed in the concave portion, and (b) forming a film to fill the inside of the concave portion by post-treating the substrate, which has the oligomer-containing layer formed on the surface of the substrate and in the concave portion, under a second temperature not less than the first temperature, so that the oligomer-containing layer formed in the concave portion is modified to form the film.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is accommodated; a substrate mounting table provided in the process chamber and heated by a heater; and a substrate mounting table cover arranged on an upper surface of the substrate mounting table and configured such that the substrate is placed on an upper surface of the substrate mounting table cover, wherein the substrate mounting table cover is made of silicon carbide and is provided with a silicon oxide layer of a first thickness at least on the upper surface of the substrate mounting table cover where the substrate is placed.

A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.