There is provided a technique that includes a first nozzle configured to supply a process gas to a process chamber that processes a substrate, a second nozzle arranged to be spaced apart by a predetermined distance from the first nozzle in a circumferential direction of the substrate and configured to supply an inert gas to the process chamber, and a reaction container defining the process chamber therein and including a first protrusion protruding outward to accommodate the first nozzle and a second protrusion protruding outward to accommodate the second nozzle.

A substrate processing apparatus includes: a process chamber configured to process a substrate; a precursor gas supply section for supplying a precursor gas; a reactant gas supply section for supplying a reactant gas; an exhauster for exhausting the process chamber; a plasma generator including first and second plasma generators for converting the reactant gas into plasma to activate the reactant gas, the first and second plasma generators being disposed so that a straight line passing through the center of the process chamber and the exhauster is interposed therebetween; and a gas rectifier including a first partition member disposed along an inner wall of the process chamber between the precursor gas supply section and the first plasma generator, and a second partition member disposed at an outer circumferential portion of the substrate along an inner wall of the process chamber between the precursor gas supply section and the second plasma generator.

Provided is a method of manufacturing an electrode plate for a plasma processing apparatus for forming a plurality of gas holes having a straight portion exceeding 12 mm in length in a thickness direction of an electrode plate main body in a penetrating state and in parallel to each other, the method including: a prepared hole forming step of forming a prepared hole with a diameter of 50% or more and 80% or less of a diameter of a hole forming the straight portion with a first drill from one surface of the electrode plate main body; and a straight portion forming step of forming the straight portion to overlap the prepared hole with a second drill.

A vaporizer includes an atomizer, a vaporizer body, and a heating portion. The heating portion includes an inner heater block and an inner heater. An inner tube is made of a heat-resistant glass and has an outer diameter smaller than an inner diameter of the hollow vaporizer body. The inner heater block includes division pieces obtained by dividing the inner heater block along a center axis thereof and an elastic material. The elastic material is disposed between the division pieces and acts so as to press and urge the division pieces in separation directions and press them against an inner peripheral surface of the inner tube. The inner heater is embedded in each division piece.

A film formation method includes: a step of preparing a substrate including a layer of a first material formed on a surface in a first region, and a layer of a second material formed on a surface in a second region; a first SAM formation step of forming a first self-assembled monolayer in the first region by supplying a raw material gas for the first self-assembled monolayer, wherein the raw material gas corresponds to the first material; and a second SAM formation step for forming a second self-assembled monolayer including an organic acid group or a second self-assembled monolayer including a condensable group on top of the first self-assembled monolayer in the first region by supplying a first gas, which includes an organic acid group, while including a self-assembling molecule, or by supplying a second gas, which includes a condensable group, while including a self-assembling molecule.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

A silicon carbide substrate has a trench extending from a main surface of the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width at a trench bottom. A shielding region is formed in the silicon carbide substrate. The shielding region extends along the trench bottom. In at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration. The first width is less than the trench width and is at least 30% of the trench width.

A silicon carbide substrate has a trench extending from a main surface of the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width at a trench bottom. A shielding region is formed in the silicon carbide substrate. The shielding region extends along the trench bottom. In at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration. The first width is less than the trench width and is at least 30% of the trench width.

A plasma processing apparatus, which introduces electromagnetic waves having a frequency of the VHF band or higher into a processing container and processes a substrate by using plasma generated from a gas, includes: a stage which is provided inside the processing container and on which the substrate is placed; an electromagnetic wave introducer formed to face an inner wall of the processing container and configured to introduce the electromagnetic waves into the processing container; and a dielectric member provided on the inner wall through which the electromagnetic waves propagate, wherein a first portion of the dielectric member protrudes from the inner wall toward the stage, and wherein a second portion of the dielectric member is inserted into a recess or step portion of the inner wall.